Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 245-248 |
| Seitenumfang | 4 |
| Fachzeitschrift | Journal of Materials Science: Materials in Electronics |
| Jahrgang | 12 |
| Ausgabenummer | 4-6 |
| Publikationsstatus | Veröffentlicht - Juni 2001 |
| Extern publiziert | Ja |
Abstract
The conduction band offset for strained Si1-x-yGexCy layers grown on Si(0 0 1) is estimated by considering separately the hydrostatic strain, the uniaxial strain, and the intrinsic chemical effect of Ge and C. Tensile-strained C-containing layers provide a conduction band offset ΔEc suitable for electron confinement. At given ΔEc introducing Ge in C-containing alloys allows us to reduce the strain, which should be beneficial to the thermal stability. With a view to n-channel field effect transistor (FET) application on Si substrate, the in-plane electron mobility in tensile ternary layers is calculated using a Monte Carlo transport simulation. The impact of alloy scattering is emphasized.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Journal of Materials Science: Materials in Electronics, Jahrgang 12, Nr. 4-6, 06.2001, S. 245-248.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Band offsets and electron transport calculation for strained Si1-x-yGexCy/Si heterostructures
AU - Dollfus, P.
AU - Galdin, S.
AU - Hesto, P.
AU - Osten, H. J.
PY - 2001/6
Y1 - 2001/6
N2 - The conduction band offset for strained Si1-x-yGexCy layers grown on Si(0 0 1) is estimated by considering separately the hydrostatic strain, the uniaxial strain, and the intrinsic chemical effect of Ge and C. Tensile-strained C-containing layers provide a conduction band offset ΔEc suitable for electron confinement. At given ΔEc introducing Ge in C-containing alloys allows us to reduce the strain, which should be beneficial to the thermal stability. With a view to n-channel field effect transistor (FET) application on Si substrate, the in-plane electron mobility in tensile ternary layers is calculated using a Monte Carlo transport simulation. The impact of alloy scattering is emphasized.
AB - The conduction band offset for strained Si1-x-yGexCy layers grown on Si(0 0 1) is estimated by considering separately the hydrostatic strain, the uniaxial strain, and the intrinsic chemical effect of Ge and C. Tensile-strained C-containing layers provide a conduction band offset ΔEc suitable for electron confinement. At given ΔEc introducing Ge in C-containing alloys allows us to reduce the strain, which should be beneficial to the thermal stability. With a view to n-channel field effect transistor (FET) application on Si substrate, the in-plane electron mobility in tensile ternary layers is calculated using a Monte Carlo transport simulation. The impact of alloy scattering is emphasized.
UR - http://www.scopus.com/inward/record.url?scp=0035299718&partnerID=8YFLogxK
U2 - 10.1023/A:1011211420560
DO - 10.1023/A:1011211420560
M3 - Article
AN - SCOPUS:0035299718
VL - 12
SP - 245
EP - 248
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 4-6
ER -