Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 125-132 |
| Seitenumfang | 8 |
| Fachzeitschrift | Nuclear Inst. and Methods in Physics Research, B |
| Jahrgang | 100 |
| Ausgabenummer | 1 |
| Publikationsstatus | Veröffentlicht - 1 Mai 1995 |
| Extern publiziert | Ja |
Abstract
Resonant backscattering of 4He ions using the 12C(4He,4He) 12C resonance at 4.265 MeV has been used to analyze C in MBE grown Si1-yCy layers and in ion implanted Si with C concentrations of the order of one at.%. With ion channeling the ratio of substitutional to interstitial C sites in the Si1-yCy layers was determined and the obtained values for the tetragonal distortion are compared with results from X-ray diffraction measurements. The measured C amount of an ion implanted sample used for calibration was in good agreement with the nominal amount, while the range distribution was about 15% shallower than predicted by TRIM calculations. Strong deviations from the Rutherford scattering cross section are observed for scattering from Si and the influence due to background from nuclear reactions with Si on the C analysis is discussed.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Kern- und Hochenergiephysik
- Physik und Astronomie (insg.)
- Instrumentierung
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in: Nuclear Inst. and Methods in Physics Research, B, Jahrgang 100, Nr. 1, 01.05.1995, S. 125-132.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Backscattering analysis of Si1-yCy layers using the 12C(4He,4He) 12C resonance at 4.265 MeV
AU - Endisch, D.
AU - Osten, H. J.
AU - Zaumseil, P.
AU - Zinke-Allmang, M.
PY - 1995/5/1
Y1 - 1995/5/1
N2 - Resonant backscattering of 4He ions using the 12C(4He,4He) 12C resonance at 4.265 MeV has been used to analyze C in MBE grown Si1-yCy layers and in ion implanted Si with C concentrations of the order of one at.%. With ion channeling the ratio of substitutional to interstitial C sites in the Si1-yCy layers was determined and the obtained values for the tetragonal distortion are compared with results from X-ray diffraction measurements. The measured C amount of an ion implanted sample used for calibration was in good agreement with the nominal amount, while the range distribution was about 15% shallower than predicted by TRIM calculations. Strong deviations from the Rutherford scattering cross section are observed for scattering from Si and the influence due to background from nuclear reactions with Si on the C analysis is discussed.
AB - Resonant backscattering of 4He ions using the 12C(4He,4He) 12C resonance at 4.265 MeV has been used to analyze C in MBE grown Si1-yCy layers and in ion implanted Si with C concentrations of the order of one at.%. With ion channeling the ratio of substitutional to interstitial C sites in the Si1-yCy layers was determined and the obtained values for the tetragonal distortion are compared with results from X-ray diffraction measurements. The measured C amount of an ion implanted sample used for calibration was in good agreement with the nominal amount, while the range distribution was about 15% shallower than predicted by TRIM calculations. Strong deviations from the Rutherford scattering cross section are observed for scattering from Si and the influence due to background from nuclear reactions with Si on the C analysis is discussed.
UR - http://www.scopus.com/inward/record.url?scp=0039201159&partnerID=8YFLogxK
U2 - 10.1016/0168-583X(95)00259-6
DO - 10.1016/0168-583X(95)00259-6
M3 - Article
AN - SCOPUS:0039201159
VL - 100
SP - 125
EP - 132
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
SN - 0168-583X
IS - 1
ER -