Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009 |
| Seiten | 244-246 |
| Seitenumfang | 3 |
| ISBN (elektronisch) | 9781424429509 |
| Publikationsstatus | Veröffentlicht - 2009 |
| Extern publiziert | Ja |
| Veranstaltung | 34th IEEE Photovoltaic Specialists Conference (PVSC 2009) - Philadelphia, PA, USA / Vereinigte Staaten Dauer: 7 Juni 2009 → 12 Juni 2009 Konferenznummer: 34 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm2 and a cell thickness of 30 μm. We reach an efficiency of 13.5 %. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm2.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
- RIS
2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009. 2009. S. 244-246 5411686 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Back contact monocrystalline thin-film silicon solar cells from the porous silicon process
AU - Haase, F.
AU - Horbelt, R.
AU - Terheiden, B.
AU - Plagwitz, H.
AU - Brendel, R.
N1 - Conference code: 34
PY - 2009
Y1 - 2009
N2 - We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm2 and a cell thickness of 30 μm. We reach an efficiency of 13.5 %. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm2.
AB - We develop a back contact monocrystalline thin-film silicon solar cell using the porous silicon process. Laser processes are applied for all structuring steps. Thus no photolithography or other masking techniques are required. A single evaporation step is used to metallize the cell. Laser scribing is used for contact separation. The cell has a planar front surface, an area of 79.2 cm2 and a cell thickness of 30 μm. We reach an efficiency of 13.5 %. The open-circuit voltage is 633 mV and the short-circuit current density is 28.7 mA/cm2.
UR - http://www.scopus.com/inward/record.url?scp=77951571298&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2009.5411686
DO - 10.1109/PVSC.2009.5411686
M3 - Conference contribution
AN - SCOPUS:77951571298
SN - 978-1-4244-2949-3
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 244
EP - 246
BT - 2009 34th IEEE Photovoltaic Specialists Conference, PVSC 2009
T2 - 34th IEEE Photovoltaic Specialists Conference (PVSC 2009)
Y2 - 7 June 2009 through 12 June 2009
ER -