Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 |
| Herausgeber (Verlag) | IEEE Computer Society |
| Seiten | 992-995 |
| Seitenumfang | 4 |
| ISBN (Print) | 1424400163, 9781424400164, 1-4244-0017-1 |
| Publikationsstatus | Veröffentlicht - 2006 |
| Extern publiziert | Ja |
| Veranstaltung | 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4) - Waikoloa, HI, USA / Vereinigte Staaten Dauer: 7 Mai 2006 → 12 Mai 2006 Konferenznummer: 4 |
Abstract
The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
Ziele für nachhaltige Entwicklung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. S. 992-995 4059797.
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Autodiffused boron emitter for n-type monocrystalline SI thin-film solar cells
AU - Wolf, Andreas
AU - Terheiden, Barbara
AU - Brendel, Rolf
N1 - Conference code: 4
PY - 2006
Y1 - 2006
N2 - The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.
AB - The generation of an emitter in monocrystalline silicon thin-film solar cells by out-diffusion of dopant atoms from the growth substrate into the epitaxial layer is demonstrated. Starting with a boron-doped p+-type substrate, a porous silicon surface layer is created to permit the layer transfer (PSI process). A p+-type emitter automatically forms by out-diffusion of boron atoms during the epitaxial growth of n-type silicon films. This "autodiffusion" process creates an emitter with a moderate surface concentration of 3×1018 cm-3 and a junction depth of 1.1 μm. The sheet resistance is 330 Ω/□. n-type thin-film solar cells with an autodiffused boron emitter on the rear side of the cells are fabricated. An independently confirmed energy conversion efficiency of 14.5 % with a short circuit current density of 33.3 mA/cm2 as measured under standard testing conditions is achieved for a 4 cm2 large cell with a thickness of 24 μm.
UR - http://www.scopus.com/inward/record.url?scp=41749120312&partnerID=8YFLogxK
U2 - 10.1109/WCPEC.2006.279285
DO - 10.1109/WCPEC.2006.279285
M3 - Conference contribution
AN - SCOPUS:41749120312
SN - 1424400163
SN - 9781424400164
SN - 1-4244-0017-1
SP - 992
EP - 995
BT - Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PB - IEEE Computer Society
T2 - 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4)
Y2 - 7 May 2006 through 12 May 2006
ER -