Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 |
| ISBN (elektronisch) | 9781424416417 |
| Publikationsstatus | Veröffentlicht - 2008 |
| Extern publiziert | Ja |
| Veranstaltung | 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, USA / Vereinigte Staaten Dauer: 11 Mai 2008 → 16 Mai 2008 |
Publikationsreihe
| Name | Conference Record of the IEEE Photovoltaic Specialists Conference |
|---|---|
| ISSN (Print) | 0160-8371 |
Abstract
We present independently confirmed efficiencies above 20% for PERC-type solar cells with the point-contacted rear being either passivated by atomic-layer-deposited Al2O3 or by stacks consisting of an ultrathin Al2O3 film and a thicker PECVD-SiOx layer. Internal quantum efficiency measurements reveal that the effective rear surface recombination velocities of the single-layer Al2O 3-passivated cells are comparable to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al2O3/SiOx-passivated cells are even lower. Very low effective rear surface recombination velocities of only 70 cm/s are reported for the Al2O3/SiOx stacks, including metalized areas on the cell rear.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
- RIS
33rd IEEE Photovoltaic Specialists Conference, PVSC 2008. 2008. 4922636 (Conference Record of the IEEE Photovoltaic Specialists Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Atomic-layer-deposited aluminum oxide for the surface passivation of high-efficiency silicon solar cells
AU - Schmidt, Jan
AU - Merkle, Agnes
AU - Hoex, B.
AU - Van De Sanden, M. C.M.
AU - Kessels, W. M.M.
AU - Brendel, Rolf
N1 - Funding Information: We gratefully acknowl edge the financial support provided by the German State of Lower Saxony and the Netherlands Technology Foundation STW.
PY - 2008
Y1 - 2008
N2 - We present independently confirmed efficiencies above 20% for PERC-type solar cells with the point-contacted rear being either passivated by atomic-layer-deposited Al2O3 or by stacks consisting of an ultrathin Al2O3 film and a thicker PECVD-SiOx layer. Internal quantum efficiency measurements reveal that the effective rear surface recombination velocities of the single-layer Al2O 3-passivated cells are comparable to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al2O3/SiOx-passivated cells are even lower. Very low effective rear surface recombination velocities of only 70 cm/s are reported for the Al2O3/SiOx stacks, including metalized areas on the cell rear.
AB - We present independently confirmed efficiencies above 20% for PERC-type solar cells with the point-contacted rear being either passivated by atomic-layer-deposited Al2O3 or by stacks consisting of an ultrathin Al2O3 film and a thicker PECVD-SiOx layer. Internal quantum efficiency measurements reveal that the effective rear surface recombination velocities of the single-layer Al2O 3-passivated cells are comparable to those measured on reference cells passivated by an aluminum-annealed thermal SiO2, while those of the Al2O3/SiOx-passivated cells are even lower. Very low effective rear surface recombination velocities of only 70 cm/s are reported for the Al2O3/SiOx stacks, including metalized areas on the cell rear.
UR - http://www.scopus.com/inward/record.url?scp=84862898678&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2008.4922636
DO - 10.1109/PVSC.2008.4922636
M3 - Conference contribution
AN - SCOPUS:84862898678
SN - 978-1-4244-1640-0
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
BT - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
T2 - 33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Y2 - 11 May 2008 through 16 May 2008
ER -