Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water: Process optimization, film analysis and electrical properties

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Ke Xu
  • Ayan Roy Chaudhuri
  • Harish Parala
  • Dominik Schwendt
  • Teresa De Los Arcos
  • H. Jörg Osten
  • Anjana Devi

Organisationseinheiten

Externe Organisationen

  • Ruhr-Universität Bochum
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)3939-3946
Seitenumfang8
FachzeitschriftJournal of Materials Chemistry C
Jahrgang1
Ausgabenummer25
Frühes Online-Datum17 Apr. 2013
PublikationsstatusVeröffentlicht - 7 Juli 2013

Abstract

For the first time, the combination of the homoleptic erbium tris-guanidinate metalorganic complex ([Er(NMe2-Guan)3]) simply with water yielded high quality Er2O3 thin films on Si(100) substrates employing the atomic layer deposition (ALD) process. The process optimization to grow good quality Er2O3 layers was performed by varying the Er precursor pulse time, water pulse time and purge time. The high reactivity of the Er compound towards water and good thermal stability in the temperature range of 150-275°C (ALD window) resulted in homogeneous, stoichiometric Er2O3 layers with high growth rates (1.1 Å per cycle) and the as-deposited films crystallized in the cubic phase. The saturation behavior at different temperatures in the ALD window and the linear dependence of film thickness as a function of precursor pulse time confirmed the true ALD process. The potential of Er2O 3 thin films as gate dielectrics was verified by performing capacitance-voltage (C-V) and current-voltage (I-V) measurements. Dielectric constants estimated from the accumulation capacitance were found to be in the range of 10-13 for layers of different thicknesses (15-30 nm).

ASJC Scopus Sachgebiete

Zitieren

Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water: Process optimization, film analysis and electrical properties. / Xu, Ke; Chaudhuri, Ayan Roy; Parala, Harish et al.
in: Journal of Materials Chemistry C, Jahrgang 1, Nr. 25, 07.07.2013, S. 3939-3946.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Xu K, Chaudhuri AR, Parala H, Schwendt D, Arcos TDL, Osten HJ et al. Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water: Process optimization, film analysis and electrical properties. Journal of Materials Chemistry C. 2013 Jul 7;1(25):3939-3946. Epub 2013 Apr 17. doi: 10.1039/c3tc30401a
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abstract = "For the first time, the combination of the homoleptic erbium tris-guanidinate metalorganic complex ([Er(NMe2-Guan)3]) simply with water yielded high quality Er2O3 thin films on Si(100) substrates employing the atomic layer deposition (ALD) process. The process optimization to grow good quality Er2O3 layers was performed by varying the Er precursor pulse time, water pulse time and purge time. The high reactivity of the Er compound towards water and good thermal stability in the temperature range of 150-275°C (ALD window) resulted in homogeneous, stoichiometric Er2O3 layers with high growth rates (1.1 {\AA} per cycle) and the as-deposited films crystallized in the cubic phase. The saturation behavior at different temperatures in the ALD window and the linear dependence of film thickness as a function of precursor pulse time confirmed the true ALD process. The potential of Er2O 3 thin films as gate dielectrics was verified by performing capacitance-voltage (C-V) and current-voltage (I-V) measurements. Dielectric constants estimated from the accumulation capacitance were found to be in the range of 10-13 for layers of different thicknesses (15-30 nm).",
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T2 - Process optimization, film analysis and electrical properties

AU - Xu, Ke

AU - Chaudhuri, Ayan Roy

AU - Parala, Harish

AU - Schwendt, Dominik

AU - Arcos, Teresa De Los

AU - Osten, H. Jörg

AU - Devi, Anjana

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N2 - For the first time, the combination of the homoleptic erbium tris-guanidinate metalorganic complex ([Er(NMe2-Guan)3]) simply with water yielded high quality Er2O3 thin films on Si(100) substrates employing the atomic layer deposition (ALD) process. The process optimization to grow good quality Er2O3 layers was performed by varying the Er precursor pulse time, water pulse time and purge time. The high reactivity of the Er compound towards water and good thermal stability in the temperature range of 150-275°C (ALD window) resulted in homogeneous, stoichiometric Er2O3 layers with high growth rates (1.1 Å per cycle) and the as-deposited films crystallized in the cubic phase. The saturation behavior at different temperatures in the ALD window and the linear dependence of film thickness as a function of precursor pulse time confirmed the true ALD process. The potential of Er2O 3 thin films as gate dielectrics was verified by performing capacitance-voltage (C-V) and current-voltage (I-V) measurements. Dielectric constants estimated from the accumulation capacitance were found to be in the range of 10-13 for layers of different thicknesses (15-30 nm).

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