Asymmetric coupled cmos lines-an experimental study

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • Uwe Arz
  • Dylan F. Williams
  • David K. Walker
  • Hartmut Grabinski

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Details

OriginalspracheEnglisch
Seiten (von - bis)2409-2414
Seitenumfang6
FachzeitschriftIEEE Transactions on Microwave Theory and Techniques
Jahrgang48
Ausgabenummer12
PublikationsstatusVeröffentlicht - 2000

Abstract

This paper investigates the properties of asymmetric coupled lines built in a 0.254tm CMOS technology over the frequency range of 50 MHz to 26.5 GHz. We show that the frequency-dependent line parameters extracted from calibrated four-port scattering-parameter measurements agree well with numerical predictions. We also demonstrate by measurement and calculation that the two fundamental modes of the coupled-line system share significant cross power. To our knowledge, this is the first complete experimental characterization of asymmetric coupled lines on silicon ever reported.

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Asymmetric coupled cmos lines-an experimental study. / Arz, Uwe; Williams, Dylan F.; Walker, David K. et al.
in: IEEE Transactions on Microwave Theory and Techniques, Jahrgang 48, Nr. 12, 2000, S. 2409-2414.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Arz, U, Williams, DF, Walker, DK & Grabinski, H 2000, 'Asymmetric coupled cmos lines-an experimental study', IEEE Transactions on Microwave Theory and Techniques, Jg. 48, Nr. 12, S. 2409-2414. https://doi.org/10.1109/22.898991
Arz U, Williams DF, Walker DK, Grabinski H. Asymmetric coupled cmos lines-an experimental study. IEEE Transactions on Microwave Theory and Techniques. 2000;48(12):2409-2414. doi: 10.1109/22.898991
Arz, Uwe ; Williams, Dylan F. ; Walker, David K. et al. / Asymmetric coupled cmos lines-an experimental study. in: IEEE Transactions on Microwave Theory and Techniques. 2000 ; Jahrgang 48, Nr. 12. S. 2409-2414.
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