Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • Pietro P. Altermatt
  • Jan Schmidt
  • Gernot Heiser
  • Armin G. Aberle

Externe Organisationen

  • University of New South Wales (UNSW)
  • Institut für Solarenergieforschung GmbH (ISFH)
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Details

OriginalspracheEnglisch
Seiten (von - bis)4938-4944
Seitenumfang7
FachzeitschriftJournal of applied physics
Jahrgang82
Ausgabenummer10
PublikationsstatusVeröffentlicht - 15 Nov. 1997
Extern publiziertJa

Abstract

In traditional band-to-band Auger recombination theory, the low-injection carrier lifetime is an inverse quadratic function of the doping density. However, for doping densities below about 3 × 1018cm-3, the low-injection Auger lifetimes measured in the past on silicon were significantly smaller than predicted by this theory. Recently, a new theory has been developed [A. Hangleiter and R. Häcker Phys. Rev. Lett. 65, 215 (1990)] that attributes these deviations to Coulombic interactions between mobile charge carriers. This theory has been supported experimentally to a high degree of accuracy in n-type silicon; however, no satisfactory support for it has been found in p-type silicon for doping densities below 3×1017 cm-3. In this work, we investigate the most recent lifetime measurements of crystalline silicon and support experimentally the Coulomb-enhanced Auger theory in p-type silicon in the doping range down to 1×1016 cm-3. Based on the experimental data, we present an empirical parameterisation of the low-injection Auger lifetime. This parameterisation is valid in n- and p-type silicon with arbitrary doping concentrations and for temperatures between 70 and 400 K. We implement this parameterisation into a numerical device simulator to demonstrate how the new Auger limit influences the open-circuit voltage capability of silicon solar cells. Further, we briefly discuss why the Auger recombination rates are less enhanced under high-injection conditions than under low-injection conditions.

ASJC Scopus Sachgebiete

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Assessment and parameterisation of Coulomb-enhanced Auger recombination coefficients in lowly injected crystalline silicon. / Altermatt, Pietro P.; Schmidt, Jan; Heiser, Gernot et al.
in: Journal of applied physics, Jahrgang 82, Nr. 10, 15.11.1997, S. 4938-4944.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

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abstract = "In traditional band-to-band Auger recombination theory, the low-injection carrier lifetime is an inverse quadratic function of the doping density. However, for doping densities below about 3 × 1018cm-3, the low-injection Auger lifetimes measured in the past on silicon were significantly smaller than predicted by this theory. Recently, a new theory has been developed [A. Hangleiter and R. H{\"a}cker Phys. Rev. Lett. 65, 215 (1990)] that attributes these deviations to Coulombic interactions between mobile charge carriers. This theory has been supported experimentally to a high degree of accuracy in n-type silicon; however, no satisfactory support for it has been found in p-type silicon for doping densities below 3×1017 cm-3. In this work, we investigate the most recent lifetime measurements of crystalline silicon and support experimentally the Coulomb-enhanced Auger theory in p-type silicon in the doping range down to 1×1016 cm-3. Based on the experimental data, we present an empirical parameterisation of the low-injection Auger lifetime. This parameterisation is valid in n- and p-type silicon with arbitrary doping concentrations and for temperatures between 70 and 400 K. We implement this parameterisation into a numerical device simulator to demonstrate how the new Auger limit influences the open-circuit voltage capability of silicon solar cells. Further, we briefly discuss why the Auger recombination rates are less enhanced under high-injection conditions than under low-injection conditions.",
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AU - Altermatt, Pietro P.

AU - Schmidt, Jan

AU - Heiser, Gernot

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