Anti-phase domains in cubic GaN

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autorschaft

  • Ricarda Maria Kemper
  • Thorsten Schupp
  • Maik Häberlen
  • Thomas Niendorf
  • Hans Jürgen Maier
  • Anja Dempewolf
  • Frank Bertram
  • Jürgen Christen
  • Ronny Kirste
  • Axel Hoffmann
  • Jörg Lindner
  • Donat Josef As

Externe Organisationen

  • Universität Paderborn
  • Otto-von-Guericke-Universität Magdeburg
  • Technische Universität Berlin
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Aufsatznummer123512
FachzeitschriftJournal of applied physics
Jahrgang110
Ausgabenummer12
PublikationsstatusVeröffentlicht - 22 Dez. 2011
Extern publiziertJa

Abstract

The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, -Raman and cathodoluminescence spectroscopy.

ASJC Scopus Sachgebiete

Zitieren

Anti-phase domains in cubic GaN. / Maria Kemper, Ricarda; Schupp, Thorsten; Häberlen, Maik et al.
in: Journal of applied physics, Jahrgang 110, Nr. 12, 123512, 22.12.2011.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Maria Kemper, R, Schupp, T, Häberlen, M, Niendorf, T, Maier, HJ, Dempewolf, A, Bertram, F, Christen, J, Kirste, R, Hoffmann, A, Lindner, J & Josef As, D 2011, 'Anti-phase domains in cubic GaN', Journal of applied physics, Jg. 110, Nr. 12, 123512. https://doi.org/10.1063/1.3666050
Maria Kemper, R., Schupp, T., Häberlen, M., Niendorf, T., Maier, H. J., Dempewolf, A., Bertram, F., Christen, J., Kirste, R., Hoffmann, A., Lindner, J., & Josef As, D. (2011). Anti-phase domains in cubic GaN. Journal of applied physics, 110(12), Artikel 123512. https://doi.org/10.1063/1.3666050
Maria Kemper R, Schupp T, Häberlen M, Niendorf T, Maier HJ, Dempewolf A et al. Anti-phase domains in cubic GaN. Journal of applied physics. 2011 Dez 22;110(12):123512. doi: 10.1063/1.3666050
Maria Kemper, Ricarda ; Schupp, Thorsten ; Häberlen, Maik et al. / Anti-phase domains in cubic GaN. in: Journal of applied physics. 2011 ; Jahrgang 110, Nr. 12.
Download
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title = "Anti-phase domains in cubic GaN",
abstract = "The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, -Raman and cathodoluminescence spectroscopy.",
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T1 - Anti-phase domains in cubic GaN

AU - Maria Kemper, Ricarda

AU - Schupp, Thorsten

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AU - Niendorf, Thomas

AU - Maier, Hans Jürgen

AU - Dempewolf, Anja

AU - Bertram, Frank

AU - Christen, Jürgen

AU - Kirste, Ronny

AU - Hoffmann, Axel

AU - Lindner, Jörg

AU - Josef As, Donat

N1 - Funding information: The authors would like to thank Prof. Dr. W. Bremser and especially Dipl.-Chem. Ing. N. Buitkamp (University of Paderborn) for access to the SEM. The work at Paderborn was financially supported by German Science Foundation (DFG) (Project No. AS 107/4-1, SCHM 136/11-1 and GRK 1464). The work at TU-Berlin was supported by DFG via SFB 787.

PY - 2011/12/22

Y1 - 2011/12/22

N2 - The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, -Raman and cathodoluminescence spectroscopy.

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