Details
Originalsprache | Englisch |
---|---|
Aufsatznummer | 123512 |
Fachzeitschrift | Journal of applied physics |
Jahrgang | 110 |
Ausgabenummer | 12 |
Publikationsstatus | Veröffentlicht - 22 Dez. 2011 |
Extern publiziert | Ja |
Abstract
The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, -Raman and cathodoluminescence spectroscopy.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 110, Nr. 12, 123512, 22.12.2011.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Anti-phase domains in cubic GaN
AU - Maria Kemper, Ricarda
AU - Schupp, Thorsten
AU - Häberlen, Maik
AU - Niendorf, Thomas
AU - Maier, Hans Jürgen
AU - Dempewolf, Anja
AU - Bertram, Frank
AU - Christen, Jürgen
AU - Kirste, Ronny
AU - Hoffmann, Axel
AU - Lindner, Jörg
AU - Josef As, Donat
N1 - Funding information: The authors would like to thank Prof. Dr. W. Bremser and especially Dipl.-Chem. Ing. N. Buitkamp (University of Paderborn) for access to the SEM. The work at Paderborn was financially supported by German Science Foundation (DFG) (Project No. AS 107/4-1, SCHM 136/11-1 and GRK 1464). The work at TU-Berlin was supported by DFG via SFB 787.
PY - 2011/12/22
Y1 - 2011/12/22
N2 - The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, -Raman and cathodoluminescence spectroscopy.
AB - The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {111} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, -Raman and cathodoluminescence spectroscopy.
UR - http://www.scopus.com/inward/record.url?scp=84855312727&partnerID=8YFLogxK
U2 - 10.1063/1.3666050
DO - 10.1063/1.3666050
M3 - Article
AN - SCOPUS:84855312727
VL - 110
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 12
M1 - 123512
ER -