Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 322-326 |
| Seitenumfang | 5 |
| Fachzeitschrift | Journal of crystal growth |
| Jahrgang | 142 |
| Ausgabenummer | 3-4 |
| Publikationsstatus | Veröffentlicht - 2 Sept. 1994 |
| Extern publiziert | Ja |
Abstract
Ge1-yCy layers were grown epitaxially on Si(001) with molecular beam epitaxy. The Stranski-Krastanov islanding can be completely suppressed by using the surfactant growth technique. We could not observe any interference between the presence of the antimony monolayer and the carbon incorporation into the growing Ge layer. The degree of relaxation determined independent of X-ray diffraction and transmission electron microscopy investigations is surprisingly low. Also, the onset of relaxation is significantly delayed. The Ge1-yCy layer does not behave identically with a pseudomorphic Ge film with an artificially reduced strain; it should therefore rather be considered as a new material with its own specific strain degree.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Chemie (insg.)
- Anorganische Chemie
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Journal of crystal growth, Jahrgang 142, Nr. 3-4, 02.09.1994, S. 322-326.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Antimony-mediated growth of epitaxial Ge1-yCy layers on Si(001)
AU - Osten, H. J.
AU - Bugiel, E.
AU - Zaumseil, P.
PY - 1994/9/2
Y1 - 1994/9/2
N2 - Ge1-yCy layers were grown epitaxially on Si(001) with molecular beam epitaxy. The Stranski-Krastanov islanding can be completely suppressed by using the surfactant growth technique. We could not observe any interference between the presence of the antimony monolayer and the carbon incorporation into the growing Ge layer. The degree of relaxation determined independent of X-ray diffraction and transmission electron microscopy investigations is surprisingly low. Also, the onset of relaxation is significantly delayed. The Ge1-yCy layer does not behave identically with a pseudomorphic Ge film with an artificially reduced strain; it should therefore rather be considered as a new material with its own specific strain degree.
AB - Ge1-yCy layers were grown epitaxially on Si(001) with molecular beam epitaxy. The Stranski-Krastanov islanding can be completely suppressed by using the surfactant growth technique. We could not observe any interference between the presence of the antimony monolayer and the carbon incorporation into the growing Ge layer. The degree of relaxation determined independent of X-ray diffraction and transmission electron microscopy investigations is surprisingly low. Also, the onset of relaxation is significantly delayed. The Ge1-yCy layer does not behave identically with a pseudomorphic Ge film with an artificially reduced strain; it should therefore rather be considered as a new material with its own specific strain degree.
UR - http://www.scopus.com/inward/record.url?scp=0028761449&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(94)90339-5
DO - 10.1016/0022-0248(94)90339-5
M3 - Article
AN - SCOPUS:0028761449
VL - 142
SP - 322
EP - 326
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
IS - 3-4
ER -