Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | 2021 IEEE Sensors |
| Herausgeber (Verlag) | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (elektronisch) | 9781728195018 |
| ISBN (Print) | 978-1-7281-9502-5 |
| Publikationsstatus | Veröffentlicht - 2021 |
| Veranstaltung | 20th IEEE Sensors, SENSORS 2021 - Virtual, Online, Australien Dauer: 31 Okt. 2021 → 4 Nov. 2021 |
Publikationsreihe
| Name | Proceedings of IEEE Sensors |
|---|---|
| Band | 2021-October |
| ISSN (Print) | 1930-0395 |
| ISSN (elektronisch) | 2168-9229 |
Abstract
To improve the signal of sensors based on the anisotropic magneto-resistive (AMR) effect, the individual MR stripes are geometrically adapted to a specific pole length and connected by meander arcs. Using the high performance plastic polyether ether ketone (PEEK) that is set up for the method of laser direct structuring the substrates can be assigned a direct functionalization. Therefore, electrical connections to the backside are easily created by laser-drilled through-platings, whereas system integration on silicon requires further processes and equipment and is not always feasible. However, if a magnetic field is applied in parallel to the MR stripes (the non-sensitive axis), a change in resistance is still produced of the manufactured AMR sensors on Si of approx. 0.2%, since the current direction in the meander arcs is locally perpendicular to the magnetic field. Using non-MR material to connect the meandric arcs on the backside of the PEEK eliminates the undesired resistance change in the nonsensitive axis and improves the angle dependent measurement.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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2021 IEEE Sensors. Institute of Electrical and Electronics Engineers Inc., 2021. (Proceedings of IEEE Sensors; Band 2021-October).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - Anisotropic Magneto-Resistive Sensor Effect based Sensor using Daisy Chain on Polyether Ether Ketone Substrate
AU - De Wall, Sascha
AU - Bengsch, Sebastian
AU - Fischer, Eike
AU - Dencker, Folke
AU - Wurz, Marc Christopher
PY - 2021
Y1 - 2021
N2 - To improve the signal of sensors based on the anisotropic magneto-resistive (AMR) effect, the individual MR stripes are geometrically adapted to a specific pole length and connected by meander arcs. Using the high performance plastic polyether ether ketone (PEEK) that is set up for the method of laser direct structuring the substrates can be assigned a direct functionalization. Therefore, electrical connections to the backside are easily created by laser-drilled through-platings, whereas system integration on silicon requires further processes and equipment and is not always feasible. However, if a magnetic field is applied in parallel to the MR stripes (the non-sensitive axis), a change in resistance is still produced of the manufactured AMR sensors on Si of approx. 0.2%, since the current direction in the meander arcs is locally perpendicular to the magnetic field. Using non-MR material to connect the meandric arcs on the backside of the PEEK eliminates the undesired resistance change in the nonsensitive axis and improves the angle dependent measurement.
AB - To improve the signal of sensors based on the anisotropic magneto-resistive (AMR) effect, the individual MR stripes are geometrically adapted to a specific pole length and connected by meander arcs. Using the high performance plastic polyether ether ketone (PEEK) that is set up for the method of laser direct structuring the substrates can be assigned a direct functionalization. Therefore, electrical connections to the backside are easily created by laser-drilled through-platings, whereas system integration on silicon requires further processes and equipment and is not always feasible. However, if a magnetic field is applied in parallel to the MR stripes (the non-sensitive axis), a change in resistance is still produced of the manufactured AMR sensors on Si of approx. 0.2%, since the current direction in the meander arcs is locally perpendicular to the magnetic field. Using non-MR material to connect the meandric arcs on the backside of the PEEK eliminates the undesired resistance change in the nonsensitive axis and improves the angle dependent measurement.
KW - AMR
KW - daisy chain
KW - direct structuring
KW - magnetoresistant sensor
KW - PEEK
KW - polymer
KW - through-hole plating
UR - http://www.scopus.com/inward/record.url?scp=85123619214&partnerID=8YFLogxK
U2 - 10.1109/sensors47087.2021.9639713
DO - 10.1109/sensors47087.2021.9639713
M3 - Conference contribution
AN - SCOPUS:85123619214
SN - 978-1-7281-9502-5
T3 - Proceedings of IEEE Sensors
BT - 2021 IEEE Sensors
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 20th IEEE Sensors, SENSORS 2021
Y2 - 31 October 2021 through 4 November 2021
ER -