Details
Originalsprache | Englisch |
---|---|
Seiten (von - bis) | 999-1002 |
Seitenumfang | 4 |
Fachzeitschrift | Conference Record of the IEEE Photovoltaic Specialists Conference |
Publikationsstatus | Veröffentlicht - 2005 |
Extern publiziert | Ja |
Veranstaltung | 31st IEEE Photovoltaic Specialists Conference - 2005 - Lake Buena Vista, FL, USA / Vereinigte Staaten Dauer: 3 Jan. 2005 → 7 Jan. 2005 |
Abstract
An empiric analytical model is presented that describes both, the diode saturation current j0 and the dark series resistance Rs of the passivated and locally contacted rear side of solar cells. The model is experimentally verified for both, point and stripe contacts. Metallization fractions from 1.0% to 50% are realized in the experiments. The measured values of j0 and Rs fit the theory within the error of the measurement. We use the modelled j0 and Rs in a one-dimensional simulation of the solar cell performance, to optimize the rear contact geometry for maximum efficiency.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Wirtschaftsingenieurwesen und Fertigungstechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Conference Record of the IEEE Photovoltaic Specialists Conference, 2005, S. 999-1002.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Analytical model for the optimization of locally contacted solar cells
AU - Plagwitz, Heiko
AU - Schaper, Martin
AU - Schmidt, Jan
AU - Terheiden, Barbara
AU - Brendel, Rolf
PY - 2005
Y1 - 2005
N2 - An empiric analytical model is presented that describes both, the diode saturation current j0 and the dark series resistance Rs of the passivated and locally contacted rear side of solar cells. The model is experimentally verified for both, point and stripe contacts. Metallization fractions from 1.0% to 50% are realized in the experiments. The measured values of j0 and Rs fit the theory within the error of the measurement. We use the modelled j0 and Rs in a one-dimensional simulation of the solar cell performance, to optimize the rear contact geometry for maximum efficiency.
AB - An empiric analytical model is presented that describes both, the diode saturation current j0 and the dark series resistance Rs of the passivated and locally contacted rear side of solar cells. The model is experimentally verified for both, point and stripe contacts. Metallization fractions from 1.0% to 50% are realized in the experiments. The measured values of j0 and Rs fit the theory within the error of the measurement. We use the modelled j0 and Rs in a one-dimensional simulation of the solar cell performance, to optimize the rear contact geometry for maximum efficiency.
UR - http://www.scopus.com/inward/record.url?scp=27944491307&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:27944491307
SP - 999
EP - 1002
JO - Conference Record of the IEEE Photovoltaic Specialists Conference
JF - Conference Record of the IEEE Photovoltaic Specialists Conference
SN - 0160-8371
T2 - 31st IEEE Photovoltaic Specialists Conference - 2005
Y2 - 3 January 2005 through 7 January 2005
ER -