Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 5933-5935 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physical Review B |
| Jahrgang | 35 |
| Ausgabenummer | 11 |
| Publikationsstatus | Veröffentlicht - 1 Jan. 1987 |
| Extern publiziert | Ja |
Abstract
The line shape of Shubnikovde Haas oscillations shows a strongly asymmetric behavior for a large number of GaAs-AlxGa1-xAs heterostructures. This anomaly is not visible in measurements on samples with low mobility. Our results can be explained on the basis of an asymmetric shape of the density of states which is expected if either attractive or repulsive scatterers dominate and the number of scattering centers within one Landau orbit is small. The relative contributions of the attractive scattering centers in the AlxGa1-xAs layer (ionized Si donors) and the repulsive scattering centers in the GaAs layer (residual acceptors) can be modified by changing the wave functions of the two-dimensional electron gas with a backgate voltage.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: Physical Review B, Jahrgang 35, Nr. 11, 01.01.1987, S. 5933-5935.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Analysis of the asymmetry in Shubnikov-de Haas oscillations of two-dimensional systems
AU - Haug, R. J.
AU - Klitzing, K. V.
AU - Ploog, K.
PY - 1987/1/1
Y1 - 1987/1/1
N2 - The line shape of Shubnikovde Haas oscillations shows a strongly asymmetric behavior for a large number of GaAs-AlxGa1-xAs heterostructures. This anomaly is not visible in measurements on samples with low mobility. Our results can be explained on the basis of an asymmetric shape of the density of states which is expected if either attractive or repulsive scatterers dominate and the number of scattering centers within one Landau orbit is small. The relative contributions of the attractive scattering centers in the AlxGa1-xAs layer (ionized Si donors) and the repulsive scattering centers in the GaAs layer (residual acceptors) can be modified by changing the wave functions of the two-dimensional electron gas with a backgate voltage.
AB - The line shape of Shubnikovde Haas oscillations shows a strongly asymmetric behavior for a large number of GaAs-AlxGa1-xAs heterostructures. This anomaly is not visible in measurements on samples with low mobility. Our results can be explained on the basis of an asymmetric shape of the density of states which is expected if either attractive or repulsive scatterers dominate and the number of scattering centers within one Landau orbit is small. The relative contributions of the attractive scattering centers in the AlxGa1-xAs layer (ionized Si donors) and the repulsive scattering centers in the GaAs layer (residual acceptors) can be modified by changing the wave functions of the two-dimensional electron gas with a backgate voltage.
UR - http://www.scopus.com/inward/record.url?scp=0343266955&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.35.5933
DO - 10.1103/PhysRevB.35.5933
M3 - Article
AN - SCOPUS:0343266955
VL - 35
SP - 5933
EP - 5935
JO - Physical Review B
JF - Physical Review B
SN - 0163-1829
IS - 11
ER -