Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society |
| Herausgeber (Verlag) | IEEE Computer Society |
| ISBN (elektronisch) | 9781665435543 |
| ISBN (Print) | 978-1-6654-0256-9 |
| Publikationsstatus | Veröffentlicht - 13 Okt. 2021 |
| Veranstaltung | 47th Annual Conference of the IEEE Industrial Electronics Society, IECON 2021 - Toronto, Kanada Dauer: 13 Okt. 2021 → 16 Okt. 2021 |
Publikationsreihe
| Name | IECON Proceedings (Industrial Electronics Conference) |
|---|---|
| Band | 2021-October |
| ISSN (Print) | 1553-572X |
| ISSN (elektronisch) | 2577-1647 |
Abstract
This paper presents an active gate driver with variable gate resistance for use in SiC-driven inverters. Motivated by the negative effects that fast switching transients of SiC MOSFETs may have on the insulation and bearings of electrical machines, the operation theory of the active gate driver and its hardware concept are explained. Measurements with both the active gate driver and a reference gate driver are presented. A method is proposed to mathematically determine the optimal control pattern for the active gate driver. The measurements show that an active gate driver can achieve an optimal tradeoff between dv/dt and losses. In a modified control scheme, the voltage overshoot during turn-off can also be decreased. The benefits of using an active gate driver in an inverter when adjusting the control patterns to the switched current are outlined.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Steuerungs- und Systemtechnik
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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- BibTex
- RIS
IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society. IEEE Computer Society, 2021. (IECON Proceedings (Industrial Electronics Conference); Band 2021-October).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - An Isolated Variable-Resistance Active Gate Driver for Use in SiC-Driven Inverters
AU - Wiesemann, Julius
AU - Mertens, Axel
PY - 2021/10/13
Y1 - 2021/10/13
N2 - This paper presents an active gate driver with variable gate resistance for use in SiC-driven inverters. Motivated by the negative effects that fast switching transients of SiC MOSFETs may have on the insulation and bearings of electrical machines, the operation theory of the active gate driver and its hardware concept are explained. Measurements with both the active gate driver and a reference gate driver are presented. A method is proposed to mathematically determine the optimal control pattern for the active gate driver. The measurements show that an active gate driver can achieve an optimal tradeoff between dv/dt and losses. In a modified control scheme, the voltage overshoot during turn-off can also be decreased. The benefits of using an active gate driver in an inverter when adjusting the control patterns to the switched current are outlined.
AB - This paper presents an active gate driver with variable gate resistance for use in SiC-driven inverters. Motivated by the negative effects that fast switching transients of SiC MOSFETs may have on the insulation and bearings of electrical machines, the operation theory of the active gate driver and its hardware concept are explained. Measurements with both the active gate driver and a reference gate driver are presented. A method is proposed to mathematically determine the optimal control pattern for the active gate driver. The measurements show that an active gate driver can achieve an optimal tradeoff between dv/dt and losses. In a modified control scheme, the voltage overshoot during turn-off can also be decreased. The benefits of using an active gate driver in an inverter when adjusting the control patterns to the switched current are outlined.
KW - Active Gate Driver
KW - Drive Inverter
KW - EMI
KW - SiC
UR - http://www.scopus.com/inward/record.url?scp=85119484288&partnerID=8YFLogxK
U2 - 10.1109/IECON48115.2021.9589774
DO - 10.1109/IECON48115.2021.9589774
M3 - Conference contribution
AN - SCOPUS:85119484288
SN - 978-1-6654-0256-9
T3 - IECON Proceedings (Industrial Electronics Conference)
BT - IECON 2021 - 47th Annual Conference of the IEEE Industrial Electronics Society
PB - IEEE Computer Society
T2 - 47th Annual Conference of the IEEE Industrial Electronics Society, IECON 2021
Y2 - 13 October 2021 through 16 October 2021
ER -