Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 073702 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 115 |
| Ausgabenummer | 7 |
| Publikationsstatus | Veröffentlicht - 20 Feb. 2014 |
| Extern publiziert | Ja |
Abstract
We introduce a rear-emitter inversion layer (IL) solar cell on n-type crystalline silicon (n-Si). The hole IL is induced by the high density of negative fixed charges in an aluminum oxide (Al2O3) surface passivation layer. For the formation of contacts to the inversion layer, we employ a single-step p+ laser doping process, using aluminum from the Al2O3 layer as dopant source. Lateral hole transport through the IL underneath the n-Si/Al2O3 interface is analyzed by electrical measurements. The IL hole mobility is shown to be only marginally reduced by scattering at the high density of fixed charges at the n-Si/Al2O3 interface, resulting in an inversion layer sheet resistance of 15-18kΩ/sq (in the dark). The effective sheet resistance of the IL is shown to decrease to below 4kΩ/sq under solar cell operating conditions. Based on two-dimensional device simulations, we show that the proposed type of n-type silicon IL solar cell has a very high efficiency potential exceeding 26% including contact recombination losses.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 115, Nr. 7, 073702, 20.02.2014.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Aluminum-oxide-based inversion layer solar cells on n -type crystalline silicon
T2 - Fundamental properties and efficiency potential
AU - Werner, Florian
AU - Larionova, Yevgeniya
AU - Zielke, Dimitri
AU - Ohrdes, Tobias
AU - Schmidt, Jan
PY - 2014/2/20
Y1 - 2014/2/20
N2 - We introduce a rear-emitter inversion layer (IL) solar cell on n-type crystalline silicon (n-Si). The hole IL is induced by the high density of negative fixed charges in an aluminum oxide (Al2O3) surface passivation layer. For the formation of contacts to the inversion layer, we employ a single-step p+ laser doping process, using aluminum from the Al2O3 layer as dopant source. Lateral hole transport through the IL underneath the n-Si/Al2O3 interface is analyzed by electrical measurements. The IL hole mobility is shown to be only marginally reduced by scattering at the high density of fixed charges at the n-Si/Al2O3 interface, resulting in an inversion layer sheet resistance of 15-18kΩ/sq (in the dark). The effective sheet resistance of the IL is shown to decrease to below 4kΩ/sq under solar cell operating conditions. Based on two-dimensional device simulations, we show that the proposed type of n-type silicon IL solar cell has a very high efficiency potential exceeding 26% including contact recombination losses.
AB - We introduce a rear-emitter inversion layer (IL) solar cell on n-type crystalline silicon (n-Si). The hole IL is induced by the high density of negative fixed charges in an aluminum oxide (Al2O3) surface passivation layer. For the formation of contacts to the inversion layer, we employ a single-step p+ laser doping process, using aluminum from the Al2O3 layer as dopant source. Lateral hole transport through the IL underneath the n-Si/Al2O3 interface is analyzed by electrical measurements. The IL hole mobility is shown to be only marginally reduced by scattering at the high density of fixed charges at the n-Si/Al2O3 interface, resulting in an inversion layer sheet resistance of 15-18kΩ/sq (in the dark). The effective sheet resistance of the IL is shown to decrease to below 4kΩ/sq under solar cell operating conditions. Based on two-dimensional device simulations, we show that the proposed type of n-type silicon IL solar cell has a very high efficiency potential exceeding 26% including contact recombination losses.
UR - http://www.scopus.com/inward/record.url?scp=84896755082&partnerID=8YFLogxK
U2 - 10.1063/1.4865962
DO - 10.1063/1.4865962
M3 - Article
AN - SCOPUS:84896755082
VL - 115
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 7
M1 - 073702
ER -