All-optical transistor using an optical event horizon

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • J. Bethge
  • C. Bree
  • Sh Amiranashvili
  • F. Noack
  • G. Steinmeyer
  • A. Demircan

Externe Organisationen

  • Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (MBI)
  • Leibniz-Institut für Katalyse e. V. an der Universität Rostock (LIKAT)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des Sammelwerks2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011
PublikationsstatusVeröffentlicht - 2011
Extern publiziertJa
Veranstaltung2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 - Munich, Deutschland
Dauer: 22 Mai 201126 Mai 2011

Publikationsreihe

Name2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

Abstract

In the recent years, different mechanisms have been suggested for implementing the functionality of a transistor for photons rather than electrons. These ideas include, e.g., the nonlinear response of an inverted single molecule [1] or nonlinear surface-plasmon polaritonic crystals. However, to the best of our knowledge, no optical transistor has been demonstrated to date that can switch a high optical power with a weaker control signal nor one that can be cascaded in several stages. As a consequence of these shortcomings, Miller defined a list of 7 necessary criteria for a useful optical transistor [2]. In the following, we discuss a novel concept that allows fulfilling all these criteria for the first time. This concept is based on cross-phase modulation between two pulses in the extended interaction zone of an optical event horizon [3]. In particular, we experimentally show that a weak non-solitonic pulse can continuously shift a more than 5 times stronger soliton in wavelength, with the soliton maintaining its stable solitonic properties during the switching event. As shown in Fig. 1, we have chosen two 50 fs pulses with nJ energies and center wavelength of 590 nm (yellow pulse) and 960 nm (red pulse), which are launched into a 50 cm long polarization-maintaining photonic crystal fiber (NKT NL-PM-750) at adjustable delay. The energy ratio between the yellow and red pulse is 14.

ASJC Scopus Sachgebiete

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All-optical transistor using an optical event horizon. / Bethge, J.; Bree, C.; Amiranashvili, Sh et al.
2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. 5942883 (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Bethge, J, Bree, C, Amiranashvili, S, Noack, F, Steinmeyer, G & Demircan, A 2011, All-optical transistor using an optical event horizon. in 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011., 5942883, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011, Munich, Deutschland, 22 Mai 2011. https://doi.org/10.1109/CLEOE.2011.5942883
Bethge, J., Bree, C., Amiranashvili, S., Noack, F., Steinmeyer, G., & Demircan, A. (2011). All-optical transistor using an optical event horizon. In 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 Artikel 5942883 (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011). https://doi.org/10.1109/CLEOE.2011.5942883
Bethge J, Bree C, Amiranashvili S, Noack F, Steinmeyer G, Demircan A. All-optical transistor using an optical event horizon. in 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. 5942883. (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011). doi: 10.1109/CLEOE.2011.5942883
Bethge, J. ; Bree, C. ; Amiranashvili, Sh et al. / All-optical transistor using an optical event horizon. 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011. 2011. (2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011).
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@inproceedings{e2af02ecf8014184b0b82293aa7f3054,
title = "All-optical transistor using an optical event horizon",
abstract = "In the recent years, different mechanisms have been suggested for implementing the functionality of a transistor for photons rather than electrons. These ideas include, e.g., the nonlinear response of an inverted single molecule [1] or nonlinear surface-plasmon polaritonic crystals. However, to the best of our knowledge, no optical transistor has been demonstrated to date that can switch a high optical power with a weaker control signal nor one that can be cascaded in several stages. As a consequence of these shortcomings, Miller defined a list of 7 necessary criteria for a useful optical transistor [2]. In the following, we discuss a novel concept that allows fulfilling all these criteria for the first time. This concept is based on cross-phase modulation between two pulses in the extended interaction zone of an optical event horizon [3]. In particular, we experimentally show that a weak non-solitonic pulse can continuously shift a more than 5 times stronger soliton in wavelength, with the soliton maintaining its stable solitonic properties during the switching event. As shown in Fig. 1, we have chosen two 50 fs pulses with nJ energies and center wavelength of 590 nm (yellow pulse) and 960 nm (red pulse), which are launched into a 50 cm long polarization-maintaining photonic crystal fiber (NKT NL-PM-750) at adjustable delay. The energy ratio between the yellow and red pulse is 14.",
author = "J. Bethge and C. Bree and Sh Amiranashvili and F. Noack and G. Steinmeyer and A. Demircan",
year = "2011",
doi = "10.1109/CLEOE.2011.5942883",
language = "English",
isbn = "9781457705335",
series = "2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011",
booktitle = "2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011",
note = "2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011 ; Conference date: 22-05-2011 Through 26-05-2011",

}

Download

TY - GEN

T1 - All-optical transistor using an optical event horizon

AU - Bethge, J.

AU - Bree, C.

AU - Amiranashvili, Sh

AU - Noack, F.

AU - Steinmeyer, G.

AU - Demircan, A.

PY - 2011

Y1 - 2011

N2 - In the recent years, different mechanisms have been suggested for implementing the functionality of a transistor for photons rather than electrons. These ideas include, e.g., the nonlinear response of an inverted single molecule [1] or nonlinear surface-plasmon polaritonic crystals. However, to the best of our knowledge, no optical transistor has been demonstrated to date that can switch a high optical power with a weaker control signal nor one that can be cascaded in several stages. As a consequence of these shortcomings, Miller defined a list of 7 necessary criteria for a useful optical transistor [2]. In the following, we discuss a novel concept that allows fulfilling all these criteria for the first time. This concept is based on cross-phase modulation between two pulses in the extended interaction zone of an optical event horizon [3]. In particular, we experimentally show that a weak non-solitonic pulse can continuously shift a more than 5 times stronger soliton in wavelength, with the soliton maintaining its stable solitonic properties during the switching event. As shown in Fig. 1, we have chosen two 50 fs pulses with nJ energies and center wavelength of 590 nm (yellow pulse) and 960 nm (red pulse), which are launched into a 50 cm long polarization-maintaining photonic crystal fiber (NKT NL-PM-750) at adjustable delay. The energy ratio between the yellow and red pulse is 14.

AB - In the recent years, different mechanisms have been suggested for implementing the functionality of a transistor for photons rather than electrons. These ideas include, e.g., the nonlinear response of an inverted single molecule [1] or nonlinear surface-plasmon polaritonic crystals. However, to the best of our knowledge, no optical transistor has been demonstrated to date that can switch a high optical power with a weaker control signal nor one that can be cascaded in several stages. As a consequence of these shortcomings, Miller defined a list of 7 necessary criteria for a useful optical transistor [2]. In the following, we discuss a novel concept that allows fulfilling all these criteria for the first time. This concept is based on cross-phase modulation between two pulses in the extended interaction zone of an optical event horizon [3]. In particular, we experimentally show that a weak non-solitonic pulse can continuously shift a more than 5 times stronger soliton in wavelength, with the soliton maintaining its stable solitonic properties during the switching event. As shown in Fig. 1, we have chosen two 50 fs pulses with nJ energies and center wavelength of 590 nm (yellow pulse) and 960 nm (red pulse), which are launched into a 50 cm long polarization-maintaining photonic crystal fiber (NKT NL-PM-750) at adjustable delay. The energy ratio between the yellow and red pulse is 14.

UR - http://www.scopus.com/inward/record.url?scp=80052285656&partnerID=8YFLogxK

U2 - 10.1109/CLEOE.2011.5942883

DO - 10.1109/CLEOE.2011.5942883

M3 - Conference contribution

AN - SCOPUS:80052285656

SN - 9781457705335

T3 - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

BT - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

T2 - 2011 Conference on Lasers and Electro-Optics Europe and 12th European Quantum Electronics Conference, CLEO EUROPE/EQEC 2011

Y2 - 22 May 2011 through 26 May 2011

ER -

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