Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1871-1873 |
| Seitenumfang | 3 |
| Fachzeitschrift | Physica Status Solidi (A) Applications and Materials Science |
| Jahrgang | 210 |
| Ausgabenummer | 9 |
| Frühes Online-Datum | 14 Juni 2013 |
| Publikationsstatus | Veröffentlicht - 14 Sept. 2013 |
Abstract
We show that one-pulse laser-ablation of Al2O 3/SiNx layer stacks from silicon wafers can produce substantial p+-type Al-doped regions in the substrate. We present doping profile measurements which show that the Al-doping profiles of the laser-treated region strongly depend on the laser ablation parameters and thickness of the Al2O3 layer. We find for non-passivated laser Al-doping profiles with sheet resistance Rsheet = 180 Ω □-1 a saturation current densities J0,surf = 4 pA cm-2, which is approximately the same recombination activity as that of a boron furnace diffused layer of the same sheet resistance.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Physik und Astronomie (insg.)
- Oberflächen und Grenzflächen
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Physica Status Solidi (A) Applications and Materials Science, Jahrgang 210, Nr. 9, 14.09.2013, S. 1871-1873.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Al+-doping of Si by laser ablation of Al2O3/SiN passivation
AU - Harder, Nils Peter
AU - Larionova, Yevgeniya
AU - Brendel, Rolf
PY - 2013/9/14
Y1 - 2013/9/14
N2 - We show that one-pulse laser-ablation of Al2O 3/SiNx layer stacks from silicon wafers can produce substantial p+-type Al-doped regions in the substrate. We present doping profile measurements which show that the Al-doping profiles of the laser-treated region strongly depend on the laser ablation parameters and thickness of the Al2O3 layer. We find for non-passivated laser Al-doping profiles with sheet resistance Rsheet = 180 Ω □-1 a saturation current densities J0,surf = 4 pA cm-2, which is approximately the same recombination activity as that of a boron furnace diffused layer of the same sheet resistance.
AB - We show that one-pulse laser-ablation of Al2O 3/SiNx layer stacks from silicon wafers can produce substantial p+-type Al-doped regions in the substrate. We present doping profile measurements which show that the Al-doping profiles of the laser-treated region strongly depend on the laser ablation parameters and thickness of the Al2O3 layer. We find for non-passivated laser Al-doping profiles with sheet resistance Rsheet = 180 Ω □-1 a saturation current densities J0,surf = 4 pA cm-2, which is approximately the same recombination activity as that of a boron furnace diffused layer of the same sheet resistance.
KW - aluminum oxide
KW - laser doping
KW - silicon
KW - solar cells
UR - http://www.scopus.com/inward/record.url?scp=84884982217&partnerID=8YFLogxK
U2 - 10.1002/pssa.201329058
DO - 10.1002/pssa.201329058
M3 - Article
AN - SCOPUS:84884982217
VL - 210
SP - 1871
EP - 1873
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
SN - 0031-8965
IS - 9
ER -