Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 30-39 |
| Seitenumfang | 10 |
| Fachzeitschrift | Energy Procedia |
| Jahrgang | 15 |
| Frühes Online-Datum | 30 März 2012 |
| Publikationsstatus | Veröffentlicht - 2012 |
| Veranstaltung | 6th International Conference on Materials for Advanced Technologies, ICMAT 2011 - Singapore, Singapur Dauer: 26 Juni 2011 → 1 Juli 2011 |
Abstract
The surface passivation properties of aluminium oxide (Al 2O 3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiN x). It is shown that Al 2O 3 has fundamental advantages over SiN x when applied to the rear of p-type silicon solar cells as well as to the p + emitter of n-type silicon solar cells. Special emphasis is paid to the transfer of Al 2O 3 into industrial solar cell production. We compare different Al 2O 3 deposition techniques suitable for mass production such as ultrafast spatial atomic layer deposition, inline plasma-enhanced chemical vapour deposition and reactive sputtering. Finally, we review the most recent cell results with Al 2O 3passivation and give a brief outlook on the future prospects of Al 2O 3 in silicon solar cell production.
ASJC Scopus Sachgebiete
- Energie (insg.)
- Allgemeine Energie
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in: Energy Procedia, Jahrgang 15, 2012, S. 30-39.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - Advances in the surface passivation of silicon solar cells
AU - Schmidt, J.
AU - Werner, F.
AU - Veith, B.
AU - Zielke, D.
AU - Steingrube, S.
AU - Altermatt, P. P.
AU - Gatz, S.
AU - Dullweber, T.
AU - Brendel, R.
PY - 2012
Y1 - 2012
N2 - The surface passivation properties of aluminium oxide (Al 2O 3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiN x). It is shown that Al 2O 3 has fundamental advantages over SiN x when applied to the rear of p-type silicon solar cells as well as to the p + emitter of n-type silicon solar cells. Special emphasis is paid to the transfer of Al 2O 3 into industrial solar cell production. We compare different Al 2O 3 deposition techniques suitable for mass production such as ultrafast spatial atomic layer deposition, inline plasma-enhanced chemical vapour deposition and reactive sputtering. Finally, we review the most recent cell results with Al 2O 3passivation and give a brief outlook on the future prospects of Al 2O 3 in silicon solar cell production.
AB - The surface passivation properties of aluminium oxide (Al 2O 3) on crystalline Si are compared with the traditional passivation system of silicon nitride (SiN x). It is shown that Al 2O 3 has fundamental advantages over SiN x when applied to the rear of p-type silicon solar cells as well as to the p + emitter of n-type silicon solar cells. Special emphasis is paid to the transfer of Al 2O 3 into industrial solar cell production. We compare different Al 2O 3 deposition techniques suitable for mass production such as ultrafast spatial atomic layer deposition, inline plasma-enhanced chemical vapour deposition and reactive sputtering. Finally, we review the most recent cell results with Al 2O 3passivation and give a brief outlook on the future prospects of Al 2O 3 in silicon solar cell production.
KW - Aluminium oxide
KW - Silicon
KW - Solar cells
KW - Surface passivation
UR - http://www.scopus.com/inward/record.url?scp=84860499080&partnerID=8YFLogxK
U2 - 10.1016/j.egypro.2012.02.004
DO - 10.1016/j.egypro.2012.02.004
M3 - Conference article
AN - SCOPUS:84860499080
VL - 15
SP - 30
EP - 39
JO - Energy Procedia
JF - Energy Procedia
SN - 1876-6102
T2 - 6th International Conference on Materials for Advanced Technologies, ICMAT 2011
Y2 - 26 June 2011 through 1 July 2011
ER -