Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 213-218 |
| Seitenumfang | 6 |
| Fachzeitschrift | Solar Energy Materials and Solar Cells |
| Jahrgang | 74 |
| Ausgabenummer | 1-4 |
| Frühes Online-Datum | 24 Apr. 2002 |
| Publikationsstatus | Veröffentlicht - Okt. 2002 |
| Extern publiziert | Ja |
Abstract
The transfer of monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5μm, respectively, and a cell area of 4cm2. Device simulations indicate an efficiency potential above 20%.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
Ziele für nachhaltige Entwicklung
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in: Solar Energy Materials and Solar Cells, Jahrgang 74, Nr. 1-4, 10.2002, S. 213-218.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Advances in monocrystalline Si thin film solar cells by layer transfer
AU - Bergmann, R. B.
AU - Berge, C.
AU - Rinke, T. J.
AU - Schmidt, J.
AU - Werner, J. H.
PY - 2002/10
Y1 - 2002/10
N2 - The transfer of monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5μm, respectively, and a cell area of 4cm2. Device simulations indicate an efficiency potential above 20%.
AB - The transfer of monocrystalline Si films enables the fabrication of efficient thin film solar cells on glass or plastic foils. Chemical vapor deposition serves to epitaxially deposit Si on quasi-monocrystalline Si films obtained from thermal crystallization of a double-layer porous Si film on a Si wafer. A separation layer that forms during this crystallization process allows one to separate the epitaxial layer on top of the quasi-monocrystalline film from the starting Si wafer after solar cell processing. Independently confirmed thin film solar cell efficiencies are 15.4% and 16.6% for thin film solar cells transferred to a glass superstrate with a total Si film thickness of 24.5 and 46.5μm, respectively, and a cell area of 4cm2. Device simulations indicate an efficiency potential above 20%.
KW - Device modeling
KW - Diffusion length
KW - Light trapping
KW - Si
KW - Solar cells
UR - http://www.scopus.com/inward/record.url?scp=0036777230&partnerID=8YFLogxK
U2 - 10.1016/S0927-0248(02)00070-3
DO - 10.1016/S0927-0248(02)00070-3
M3 - Article
AN - SCOPUS:0036777230
VL - 74
SP - 213
EP - 218
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 1-4
ER -