Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 92842 |
| Fachzeitschrift | Advances in OptoElectronics |
| Jahrgang | 2007 |
| Frühes Online-Datum | 31 Mai 2007 |
| Publikationsstatus | Veröffentlicht - 2007 |
| Extern publiziert | Ja |
Abstract
This paper gives a review of some recent developments in the field of contactless silicon wafer characterization techniques based on lifetime spectroscopy and infrared imaging. In the first part of the contribution, we outline the status of different lifetime spectroscopy approaches suitable for the identification of impurities in silicon and discussin more detailthe technique of temperature- and injection-dependent lifetime spectroscopy. The second part of the paper focuses on the application of infrared cameras to analyze spatial inhomogeneities in silicon wafers. By measuring the infrared signal absorbed or emitted from light-generated free excess carriers, high-resolution recombination lifetime mappings can be generated within seconds to minutes. In addition, mappings of non-recombination-active trapping centers can be deduced from injection-dependent infrared lifetime images. The trap density has been demonstrated to be an important additional parameter in the characterization and assessment of solar-grade multicrystalline silicon wafers, as areas of increased trap density tend to deteriorate during solar cell processing.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Advances in OptoElectronics, Jahrgang 2007, 92842, 2007.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Advances in contactless silicon defect and impurity diagnostics based on lifetime spectroscopy and infrared imaging
AU - Schmidt, Jan
AU - Pohl, Peter
AU - Bothe, Karsten
AU - Brendel, Rolf
N1 - Funding Information: The authors are grateful to T. Abe (ShinEtsu) for supplying tungsten-contaminated silicon wafers. Funding was provided by the German State of Lower Saxony.
PY - 2007
Y1 - 2007
N2 - This paper gives a review of some recent developments in the field of contactless silicon wafer characterization techniques based on lifetime spectroscopy and infrared imaging. In the first part of the contribution, we outline the status of different lifetime spectroscopy approaches suitable for the identification of impurities in silicon and discussin more detailthe technique of temperature- and injection-dependent lifetime spectroscopy. The second part of the paper focuses on the application of infrared cameras to analyze spatial inhomogeneities in silicon wafers. By measuring the infrared signal absorbed or emitted from light-generated free excess carriers, high-resolution recombination lifetime mappings can be generated within seconds to minutes. In addition, mappings of non-recombination-active trapping centers can be deduced from injection-dependent infrared lifetime images. The trap density has been demonstrated to be an important additional parameter in the characterization and assessment of solar-grade multicrystalline silicon wafers, as areas of increased trap density tend to deteriorate during solar cell processing.
AB - This paper gives a review of some recent developments in the field of contactless silicon wafer characterization techniques based on lifetime spectroscopy and infrared imaging. In the first part of the contribution, we outline the status of different lifetime spectroscopy approaches suitable for the identification of impurities in silicon and discussin more detailthe technique of temperature- and injection-dependent lifetime spectroscopy. The second part of the paper focuses on the application of infrared cameras to analyze spatial inhomogeneities in silicon wafers. By measuring the infrared signal absorbed or emitted from light-generated free excess carriers, high-resolution recombination lifetime mappings can be generated within seconds to minutes. In addition, mappings of non-recombination-active trapping centers can be deduced from injection-dependent infrared lifetime images. The trap density has been demonstrated to be an important additional parameter in the characterization and assessment of solar-grade multicrystalline silicon wafers, as areas of increased trap density tend to deteriorate during solar cell processing.
UR - http://www.scopus.com/inward/record.url?scp=34250816348&partnerID=8YFLogxK
U2 - 10.1155/2007/92842
DO - 10.1155/2007/92842
M3 - Article
AN - SCOPUS:34250816348
VL - 2007
JO - Advances in OptoElectronics
JF - Advances in OptoElectronics
SN - 1687-563X
M1 - 92842
ER -