Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 6186-6199 |
| Seitenumfang | 14 |
| Fachzeitschrift | Journal of applied physics |
| Jahrgang | 81 |
| Ausgabenummer | 9 |
| Publikationsstatus | Veröffentlicht - 1 Mai 1997 |
| Extern publiziert | Ja |
Abstract
An accurate method for the determination of the bulk minority-cartier recombination lifetime of crystalline silicon wafers of typical thickness (<0.5 mm) is presented. The method consists of two main steps: first, both wafer surfaces are passivated with silicon nitride films fabricated at low temperature (<400°C) in a remote plasma-enhanced chemical vapor deposition system. Second, the effective minority-carrier lifetime of the wafer is measured by means of the contactless microwave-detected photoconductance decay technique. Due to the outstanding degree of surface passivation provided by remote-plasma silicon nitride films, the bulk minority-carrier lifetime can be very accurately determined from the measured effective minority-carrier lifetime. The method is suited for the bulk minority-carrier lifetime determination of p-type and n-type silicon wafers with doping concentrations in the 1014- 1017 cm-3 range. We demonstrate the potential of the method for commercially available float-zone, Czochralski, and multicrystalline silicon wafers of standard thickness.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Allgemeine Physik und Astronomie
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in: Journal of applied physics, Jahrgang 81, Nr. 9, 01.05.1997, S. 6186-6199.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers
AU - Schmidt, Jan
AU - Aberle, Armin G.
PY - 1997/5/1
Y1 - 1997/5/1
N2 - An accurate method for the determination of the bulk minority-cartier recombination lifetime of crystalline silicon wafers of typical thickness (<0.5 mm) is presented. The method consists of two main steps: first, both wafer surfaces are passivated with silicon nitride films fabricated at low temperature (<400°C) in a remote plasma-enhanced chemical vapor deposition system. Second, the effective minority-carrier lifetime of the wafer is measured by means of the contactless microwave-detected photoconductance decay technique. Due to the outstanding degree of surface passivation provided by remote-plasma silicon nitride films, the bulk minority-carrier lifetime can be very accurately determined from the measured effective minority-carrier lifetime. The method is suited for the bulk minority-carrier lifetime determination of p-type and n-type silicon wafers with doping concentrations in the 1014- 1017 cm-3 range. We demonstrate the potential of the method for commercially available float-zone, Czochralski, and multicrystalline silicon wafers of standard thickness.
AB - An accurate method for the determination of the bulk minority-cartier recombination lifetime of crystalline silicon wafers of typical thickness (<0.5 mm) is presented. The method consists of two main steps: first, both wafer surfaces are passivated with silicon nitride films fabricated at low temperature (<400°C) in a remote plasma-enhanced chemical vapor deposition system. Second, the effective minority-carrier lifetime of the wafer is measured by means of the contactless microwave-detected photoconductance decay technique. Due to the outstanding degree of surface passivation provided by remote-plasma silicon nitride films, the bulk minority-carrier lifetime can be very accurately determined from the measured effective minority-carrier lifetime. The method is suited for the bulk minority-carrier lifetime determination of p-type and n-type silicon wafers with doping concentrations in the 1014- 1017 cm-3 range. We demonstrate the potential of the method for commercially available float-zone, Czochralski, and multicrystalline silicon wafers of standard thickness.
UR - http://www.scopus.com/inward/record.url?scp=0000020111&partnerID=8YFLogxK
U2 - 10.1063/1.364403
DO - 10.1063/1.364403
M3 - Article
AN - SCOPUS:0000020111
VL - 81
SP - 6186
EP - 6199
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
IS - 9
ER -