Details
Originalsprache | Englisch |
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Seiten | 190-195 |
Seitenumfang | 6 |
Publikationsstatus | Veröffentlicht - 1996 |
Veranstaltung | 1996 IEEE Multi-Chip Module Conference - Santa Cruz, USA / Vereinigte Staaten Dauer: 6 Feb. 1996 → 7 Feb. 1996 |
Konferenz
Konferenz | 1996 IEEE Multi-Chip Module Conference |
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Land/Gebiet | USA / Vereinigte Staaten |
Ort | Santa Cruz |
Zeitraum | 6 Feb. 1996 → 7 Feb. 1996 |
Abstract
A very accurate, novel determination of the characteristic impedance of interconnects on semiconducting substrates has been developed. The method is based upon high frequency S-parameter measurements of two transmission lines of different lengths. The influence of the contact structures of the measurement probes are taken into account with the help of three additional measurements. The mathematical background of the method is presented. A comparison of the results obtained from measurements and from calculations is given and shows an excellent agreement.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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1996. 190-195 Beitrag in 1996 IEEE Multi-Chip Module Conference, Santa Cruz, California, USA / Vereinigte Staaten.
Publikation: Konferenzbeitrag › Paper › Forschung › Peer-Review
}
TY - CONF
T1 - Accurate determination of the characteristic impedance of lossy lines on chips based on high frequency S-parameter measurements
AU - Winkel, Thomas Michael
AU - Dutta, Lohit Sagar
AU - Grabinski, Hartmut
PY - 1996
Y1 - 1996
N2 - A very accurate, novel determination of the characteristic impedance of interconnects on semiconducting substrates has been developed. The method is based upon high frequency S-parameter measurements of two transmission lines of different lengths. The influence of the contact structures of the measurement probes are taken into account with the help of three additional measurements. The mathematical background of the method is presented. A comparison of the results obtained from measurements and from calculations is given and shows an excellent agreement.
AB - A very accurate, novel determination of the characteristic impedance of interconnects on semiconducting substrates has been developed. The method is based upon high frequency S-parameter measurements of two transmission lines of different lengths. The influence of the contact structures of the measurement probes are taken into account with the help of three additional measurements. The mathematical background of the method is presented. A comparison of the results obtained from measurements and from calculations is given and shows an excellent agreement.
UR - http://www.scopus.com/inward/record.url?scp=0029771322&partnerID=8YFLogxK
U2 - 10.1109/MCMC.1996.510793
DO - 10.1109/MCMC.1996.510793
M3 - Paper
AN - SCOPUS:0029771322
SP - 190
EP - 195
T2 - 1996 IEEE Multi-Chip Module Conference
Y2 - 6 February 1996 through 7 February 1996
ER -