Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 095009 |
| Fachzeitschrift | Semiconductor Science and Technology |
| Jahrgang | 26 |
| Ausgabenummer | 9 |
| Publikationsstatus | Veröffentlicht - Sept. 2011 |
| Extern publiziert | Ja |
Abstract
A significant acceleration of the permanent deactivation of the boron-oxygen-related recombination centre in crystalline silicon is observed if the samples are exposed to the plasma during plasma-enhanced chemical vapour deposition (PECVD) of a hydrogen-rich silicon nitride (SiNx) layer. Similar deactivation rate constants are measured in samples passivated with hydrogen-rich SiNx deposited without plasma exposure and hydrogen-lean aluminium oxide (Al2O3) deposited with plasma-assisted atomic layer deposition, suggesting that the critical parameter responsible for the acceleration is not the hydrogen content in the dielectric layer. Instead, we propose increased in-diffusion of hydrogen during or after the deposition of the PECVD SiNx layer, for example due to surface damage caused by plasma exposure, as the cause for the acceleration.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Werkstoffchemie
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in: Semiconductor Science and Technology, Jahrgang 26, Nr. 9, 095009, 09.2011.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Accelerated deactivation of the boron-oxygen-related recombination centre in crystalline silicon
AU - Lim, B.
AU - Bothe, K.
AU - Schmidt, J.
PY - 2011/9
Y1 - 2011/9
N2 - A significant acceleration of the permanent deactivation of the boron-oxygen-related recombination centre in crystalline silicon is observed if the samples are exposed to the plasma during plasma-enhanced chemical vapour deposition (PECVD) of a hydrogen-rich silicon nitride (SiNx) layer. Similar deactivation rate constants are measured in samples passivated with hydrogen-rich SiNx deposited without plasma exposure and hydrogen-lean aluminium oxide (Al2O3) deposited with plasma-assisted atomic layer deposition, suggesting that the critical parameter responsible for the acceleration is not the hydrogen content in the dielectric layer. Instead, we propose increased in-diffusion of hydrogen during or after the deposition of the PECVD SiNx layer, for example due to surface damage caused by plasma exposure, as the cause for the acceleration.
AB - A significant acceleration of the permanent deactivation of the boron-oxygen-related recombination centre in crystalline silicon is observed if the samples are exposed to the plasma during plasma-enhanced chemical vapour deposition (PECVD) of a hydrogen-rich silicon nitride (SiNx) layer. Similar deactivation rate constants are measured in samples passivated with hydrogen-rich SiNx deposited without plasma exposure and hydrogen-lean aluminium oxide (Al2O3) deposited with plasma-assisted atomic layer deposition, suggesting that the critical parameter responsible for the acceleration is not the hydrogen content in the dielectric layer. Instead, we propose increased in-diffusion of hydrogen during or after the deposition of the PECVD SiNx layer, for example due to surface damage caused by plasma exposure, as the cause for the acceleration.
UR - http://www.scopus.com/inward/record.url?scp=80051993749&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/26/9/095009
DO - 10.1088/0268-1242/26/9/095009
M3 - Article
AN - SCOPUS:80051993749
VL - 26
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 9
M1 - 095009
ER -