Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 471111 |
| Seiten (von - bis) | 47744-47760 |
| Seitenumfang | 17 |
| Fachzeitschrift | Optics Express |
| Jahrgang | 30 |
| Ausgabenummer | 26 |
| Frühes Online-Datum | 15 Dez. 2022 |
| Publikationsstatus | Veröffentlicht - 19 Dez. 2022 |
Abstract
The laser-induced ablation threshold of c-plane GaN films upon exposure to ultrashort laser pulses was investigated for different wavelengths from the IR to the UV range and pulse widths between 0.34 and 10 ps. The one-pulse ablation threshold ranges between 0.15 and 3 J/cm 2 and shows an increase with the wavelength and the pulse width, except for deep UV pulses. Based on a rate equation model, we attribute this behavior to the efficiency of seed carrier generation by interband absorption. In addition, the multi-pulse ablation threshold was analyzed. Accumulation effects are more prominent in case of IR than with UV pulses and are closely linked to damage precursors. By a thorough structural investigation, we demonstrate that threading dislocations, especially those with a screw component, significantly contribute to laser damage, since they provide a variety of dispersed states within the band gap.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
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in: Optics Express, Jahrgang 30, Nr. 26, 471111, 19.12.2022, S. 47744-47760.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - Ablation threshold of GaN films for ultrashort laser pulses and the role of threading dislocations as damage precursors
AU - Bornemann, Steffen
AU - Meyer, Tobias
AU - Voss, Tobias
AU - Waag, Andreas
N1 - Publisher Copyright: © 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.
PY - 2022/12/19
Y1 - 2022/12/19
N2 - The laser-induced ablation threshold of c-plane GaN films upon exposure to ultrashort laser pulses was investigated for different wavelengths from the IR to the UV range and pulse widths between 0.34 and 10 ps. The one-pulse ablation threshold ranges between 0.15 and 3 J/cm 2 and shows an increase with the wavelength and the pulse width, except for deep UV pulses. Based on a rate equation model, we attribute this behavior to the efficiency of seed carrier generation by interband absorption. In addition, the multi-pulse ablation threshold was analyzed. Accumulation effects are more prominent in case of IR than with UV pulses and are closely linked to damage precursors. By a thorough structural investigation, we demonstrate that threading dislocations, especially those with a screw component, significantly contribute to laser damage, since they provide a variety of dispersed states within the band gap.
AB - The laser-induced ablation threshold of c-plane GaN films upon exposure to ultrashort laser pulses was investigated for different wavelengths from the IR to the UV range and pulse widths between 0.34 and 10 ps. The one-pulse ablation threshold ranges between 0.15 and 3 J/cm 2 and shows an increase with the wavelength and the pulse width, except for deep UV pulses. Based on a rate equation model, we attribute this behavior to the efficiency of seed carrier generation by interband absorption. In addition, the multi-pulse ablation threshold was analyzed. Accumulation effects are more prominent in case of IR than with UV pulses and are closely linked to damage precursors. By a thorough structural investigation, we demonstrate that threading dislocations, especially those with a screw component, significantly contribute to laser damage, since they provide a variety of dispersed states within the band gap.
UR - http://www.scopus.com/inward/record.url?scp=85144471661&partnerID=8YFLogxK
U2 - 10.1364/OE.471111
DO - 10.1364/OE.471111
M3 - Article
VL - 30
SP - 47744
EP - 47760
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - 26
M1 - 471111
ER -