Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 075408 |
| Fachzeitschrift | Nature Electronics |
| Publikationsstatus | Veröffentlicht - 4 Dez. 2024 |
| Extern publiziert | Ja |
Abstract
The quantum anomalous Hall effect is of potential use in metrology as it provides access to Hall resistance quantization in terms of the von Klitzing constant (RK = h/e2, where h is Planck’s constant and e the elementary charge) at zero external magnetic field. However, accessing the effect is challenging because it requires low temperatures (typically below 50 mK) and low bias currents (typically below 1 µA). Here we report Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 ± 8.7) nΩ Ω−1 when extrapolated to zero measurement current and (8.6 ± 6.7) nΩ Ω−1 when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1). This precision and accuracy at the nΩ Ω−1 level (or 10−9 of relative uncertainty) reach the thresholds required for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance, which is necessary for the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Instrumentierung
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Nature Electronics, 04.12.2024.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - A zero external magnetic field quantum standard of resistance at the 10−9 level
AU - Patel, D. K.
AU - Fijalkowski, K. M.
AU - Kruskopf, M.
AU - Liu, N.
AU - Götz, M.
AU - Pesel, E.
AU - Jaime, M.
AU - Klement, M.
AU - Schreyeck, S.
AU - Brunner, K.
AU - Gould, C.
AU - Molenkamp, L. W.
AU - Scherer, H.
N1 - Publisher Copyright: © The Author(s), under exclusive licence to Springer Nature Limited 2024.
PY - 2024/12/4
Y1 - 2024/12/4
N2 - The quantum anomalous Hall effect is of potential use in metrology as it provides access to Hall resistance quantization in terms of the von Klitzing constant (RK = h/e2, where h is Planck’s constant and e the elementary charge) at zero external magnetic field. However, accessing the effect is challenging because it requires low temperatures (typically below 50 mK) and low bias currents (typically below 1 µA). Here we report Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 ± 8.7) nΩ Ω−1 when extrapolated to zero measurement current and (8.6 ± 6.7) nΩ Ω−1 when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1). This precision and accuracy at the nΩ Ω−1 level (or 10−9 of relative uncertainty) reach the thresholds required for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance, which is necessary for the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.
AB - The quantum anomalous Hall effect is of potential use in metrology as it provides access to Hall resistance quantization in terms of the von Klitzing constant (RK = h/e2, where h is Planck’s constant and e the elementary charge) at zero external magnetic field. However, accessing the effect is challenging because it requires low temperatures (typically below 50 mK) and low bias currents (typically below 1 µA). Here we report Hall resistance quantization measurements in the quantum anomalous Hall effect regime on a device based on the magnetic topological insulator V-doped (Bi,Sb)2Te3. We show that the relative deviation of the Hall resistance from RK at zero external magnetic field is (4.4 ± 8.7) nΩ Ω−1 when extrapolated to zero measurement current and (8.6 ± 6.7) nΩ Ω−1 when extrapolated to zero longitudinal resistivity (each with combined standard uncertainty, k = 1). This precision and accuracy at the nΩ Ω−1 level (or 10−9 of relative uncertainty) reach the thresholds required for relevant metrological applications and establish a zero external magnetic field quantum standard of resistance, which is necessary for the integration of quantum-based voltage and resistance standards into a single universal quantum electrical reference.
UR - http://www.scopus.com/inward/record.url?scp=85211348045&partnerID=8YFLogxK
U2 - 10.1038/s41928-024-01295-w
DO - 10.1038/s41928-024-01295-w
M3 - Article
AN - SCOPUS:85211348045
JO - Nature Electronics
JF - Nature Electronics
M1 - 075408
ER -