Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 1545-1548 |
| Seitenumfang | 4 |
| Fachzeitschrift | Microelectronics reliability |
| Jahrgang | 37 |
| Ausgabenummer | 10-11 |
| Publikationsstatus | Veröffentlicht - 1997 |
Abstract
For an aluminum-pad test structure the distributions of current density, temperature gradients and mechanical stress were determined by FEM simulations. Based on this results the electro-, thermo- and the stressmigration were calculated. The failure location out of the maximum mass flux divergence was correlated with the reliability characterization of in situ observation in SEM. A very good agreement between measurement and simulation was found.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Physik und Astronomie (insg.)
- Atom- und Molekularphysik sowie Optik
- Ingenieurwesen (insg.)
- Sicherheit, Risiko, Zuverlässigkeit und Qualität
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Werkstoffwissenschaften (insg.)
- Oberflächen, Beschichtungen und Folien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: Microelectronics reliability, Jahrgang 37, Nr. 10-11, 1997, S. 1545-1548.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - A study of the thermal - electrical- and mechanical influence on degradation in an aluminum - pad structure
AU - Yu, X.
AU - Weide, K.
N1 - Copyright: Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1997
Y1 - 1997
N2 - For an aluminum-pad test structure the distributions of current density, temperature gradients and mechanical stress were determined by FEM simulations. Based on this results the electro-, thermo- and the stressmigration were calculated. The failure location out of the maximum mass flux divergence was correlated with the reliability characterization of in situ observation in SEM. A very good agreement between measurement and simulation was found.
AB - For an aluminum-pad test structure the distributions of current density, temperature gradients and mechanical stress were determined by FEM simulations. Based on this results the electro-, thermo- and the stressmigration were calculated. The failure location out of the maximum mass flux divergence was correlated with the reliability characterization of in situ observation in SEM. A very good agreement between measurement and simulation was found.
UR - http://www.scopus.com/inward/record.url?scp=0031245836&partnerID=8YFLogxK
U2 - 10.1016/S0026-2714(97)00105-4
DO - 10.1016/S0026-2714(97)00105-4
M3 - Article
AN - SCOPUS:0031245836
VL - 37
SP - 1545
EP - 1548
JO - Microelectronics reliability
JF - Microelectronics reliability
SN - 0026-2714
IS - 10-11
ER -