TY - JOUR

T1 - A Solid-State Source of Single and Entangled Photons at Diamond SiV-Center Transitions Operating at 80K

AU - Cao, Xin

AU - Yang, Jingzhong

AU - Fandrich, Tom

AU - Zhang, Yiteng

AU - Rugeramigabo, Eddy P.

AU - Brechtken, Benedikt

AU - Haug, Rolf J.

AU - Zopf, Michael

AU - Ding, Fei

N1 - Funding Information: The authors gratefully acknowledge the German Federal Ministry of Education and Research (BMBF) within the projects QR.X (16KISQ015) and SemIQON (13N16291), the European Research Council (QD-NOMS - No. GA715770, MiNet – No. GA101043851), and the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy (EXC-2123) Quantum Frontiers (390837967). Y.Z. acknowledges the China Scholarship Council (CSC201908370225). We thank Zhao An, Frederik Benthin and Pengji Li for fruitful discussions.

PY - 2023/7/12

Y1 - 2023/7/12

N2 - Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.

AB - Large-scale quantum networks require the implementation of long-lived quantum memories as stationary nodes interacting with qubits of light. Epitaxially grown quantum dots hold great potential for the on-demand generation of single and entangled photons with high purity and indistinguishability. Coupling these emitters to memories with long coherence times enables the development of hybrid nanophotonic devices that incorporate the advantages of both systems. Here we report the first GaAs/AlGaAs quantum dots grown by the droplet etching and nanohole infilling method, emitting single photons with a narrow wavelength distribution (736.2 ± 1.7 nm) close to the zero-phonon line of silicon-vacancy centers. Polarization entangled photons are generated via the biexciton-exciton cascade with a fidelity of (0.73 ± 0.09). High single photon purity is maintained from 4 K (g(2)(0) = 0.07 ± 0.02) up to 80 K (g(2)(0) = 0.11 ± 0.01), therefore making this hybrid system technologically attractive for real-world quantum photonic applications.

KW - diamond color centers

KW - entangled photon pairs

KW - GaAs semiconductor quantum dots

KW - liquid nitrogen temperature

KW - single photons

KW - SiV zero phonon line

UR - http://www.scopus.com/inward/record.url?scp=85164286066&partnerID=8YFLogxK

U2 - 10.48550/arXiv.2304.14170

DO - 10.48550/arXiv.2304.14170

M3 - Article

C2 - 37378494

AN - SCOPUS:85164286066

VL - 23

SP - 6109

EP - 6115

JO - Nano letters

JF - Nano letters

SN - 1530-6984

IS - 13

ER -