Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 1471389 |
| Seiten (von - bis) | 285-288 |
| Seitenumfang | 4 |
| Fachzeitschrift | European Solid-State Circuits Conference |
| Publikationsstatus | Veröffentlicht - 2001 |
| Extern publiziert | Ja |
| Veranstaltung | 27th European Solid-State Circuits Conference, ESSCIRC 2001 - Villach, Österreich Dauer: 18 Sept. 2001 → 20 Sept. 2001 |
Abstract
A simple SRAM current sense amplifier with common gate input stage is presented. Instead of keeping the gate at constant potential it is controlled by the select signal of the bit line multiplexer (MUX). If the transistor is turned on it maintains a low input resistance while the off-state is used for multiplexing and power down. Experimental results in 0.18μm 1.8V CMOS show that the circuit is superior to conventional voltage sensing. It is shown that for supply voltages below IV where the driving cell currents become very small, only current sensing is capable of fast reading. For a 0.12μm technology the simulated lower supply voltage limit of the proposed circuit is as low as 0.4V.
ASJC Scopus Sachgebiete
- Informatik (insg.)
- Hardware und Architektur
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: European Solid-State Circuits Conference, 2001, S. 285-288.
Publikation: Beitrag in Fachzeitschrift › Konferenzaufsatz in Fachzeitschrift › Forschung › Peer-Review
}
TY - JOUR
T1 - A simple low voltage current sense amplifier with switchable input transistor
AU - Wicht, B.
AU - Schmitt-Landsiedel, D.
AU - Paul, S.
PY - 2001
Y1 - 2001
N2 - A simple SRAM current sense amplifier with common gate input stage is presented. Instead of keeping the gate at constant potential it is controlled by the select signal of the bit line multiplexer (MUX). If the transistor is turned on it maintains a low input resistance while the off-state is used for multiplexing and power down. Experimental results in 0.18μm 1.8V CMOS show that the circuit is superior to conventional voltage sensing. It is shown that for supply voltages below IV where the driving cell currents become very small, only current sensing is capable of fast reading. For a 0.12μm technology the simulated lower supply voltage limit of the proposed circuit is as low as 0.4V.
AB - A simple SRAM current sense amplifier with common gate input stage is presented. Instead of keeping the gate at constant potential it is controlled by the select signal of the bit line multiplexer (MUX). If the transistor is turned on it maintains a low input resistance while the off-state is used for multiplexing and power down. Experimental results in 0.18μm 1.8V CMOS show that the circuit is superior to conventional voltage sensing. It is shown that for supply voltages below IV where the driving cell currents become very small, only current sensing is capable of fast reading. For a 0.12μm technology the simulated lower supply voltage limit of the proposed circuit is as low as 0.4V.
UR - http://www.scopus.com/inward/record.url?scp=84893701060&partnerID=8YFLogxK
M3 - Conference article
AN - SCOPUS:84893701060
SP - 285
EP - 288
JO - European Solid-State Circuits Conference
JF - European Solid-State Circuits Conference
SN - 1930-8833
M1 - 1471389
T2 - 27th European Solid-State Circuits Conference, ESSCIRC 2001
Y2 - 18 September 2001 through 20 September 2001
ER -