TY - JOUR

T1 - A Resonant One-Step 325 v to 3.3-10 v DC-DC Converter with Integrated Power Stage Benefiting from High-Voltage Loss-Reduction Techniques

AU - Rindfleisch, Christoph

AU - Wicht, Bernhard

N1 - Publisher Copyright: © 1966-2012 IEEE.

PY - 2021/11/1

Y1 - 2021/11/1

N2 - This work presents a self-timed resonant high-voltage (HV) dc-dc converter in HV CMOS silicon-on-insulator (SOI) with a one-step conversion from 100-325 V input down to a 3.3-10 V output, optimized for applications below 500 mW, such as IoT, smart home, and e-mobility. Unlike bulky power modules, the HV converter is fully integrated, including an on-chip power stage, with only one external inductor (10 $\mu \text{H}$ ) and capacitor (470 nF). It reaches a high power density of 752 mW/cm3, an overall peak efficiency as high as 81%, and a light-load efficiency of 73.2% at 5 V and 50 mW output. HV loss-reduction techniques are presented and experimentally confirmed to offer an efficiency improvement of more than 32%. Integrated HV insulated gate bipolar transistors (IGBTs) are discussed and implemented as an attractive alternative to conventional integrated HV power switches, resulting in 20% smaller area at lower losses.

AB - This work presents a self-timed resonant high-voltage (HV) dc-dc converter in HV CMOS silicon-on-insulator (SOI) with a one-step conversion from 100-325 V input down to a 3.3-10 V output, optimized for applications below 500 mW, such as IoT, smart home, and e-mobility. Unlike bulky power modules, the HV converter is fully integrated, including an on-chip power stage, with only one external inductor (10 $\mu \text{H}$ ) and capacitor (470 nF). It reaches a high power density of 752 mW/cm3, an overall peak efficiency as high as 81%, and a light-load efficiency of 73.2% at 5 V and 50 mW output. HV loss-reduction techniques are presented and experimentally confirmed to offer an efficiency improvement of more than 32%. Integrated HV insulated gate bipolar transistors (IGBTs) are discussed and implemented as an attractive alternative to conventional integrated HV power switches, resulting in 20% smaller area at lower losses.

KW - DC-dc converter

KW - high power density

KW - high voltage (HV)

KW - HV loss reduction

KW - lateral insulated gate bipolar transistor (IGBT)

KW - light-load efficient

KW - silicon-on-insulator (SOI)

UR - http://www.scopus.com/inward/record.url?scp=85112632795&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2021.3098751

DO - 10.1109/JSSC.2021.3098751

M3 - Article

AN - SCOPUS:85112632795

VL - 56

SP - 3511

EP - 3520

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

SN - 0018-9200

IS - 11

ER -