Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 104950 |
| Fachzeitschrift | iScience |
| Jahrgang | 25 |
| Ausgabenummer | 9 |
| Frühes Online-Datum | 19 Aug. 2022 |
| Publikationsstatus | Veröffentlicht - 16 Sept. 2022 |
| Extern publiziert | Ja |
Abstract
The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that both tandem cells exhibit the same efficiency (21.3%), thereby demonstrating that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.
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in: iScience, Jahrgang 25, Nr. 9, 104950, 16.09.2022.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - A performance comparison between GaInP-on-Si and GaAs-on-Si 3-terminal tandem solar cells
AU - VanSant, Kaitlyn T.
AU - Warren, Emily L.
AU - Geisz, John F.
AU - Klein, Talysa R.
AU - Johnston, Steve
AU - McMahon, William E.
AU - Schulte-Huxel, Henning
AU - Rienäcker, Michael
AU - Peibst, Robby
AU - Tamboli, Adele C.
N1 - Funding Information: We would like to thank Heike Kohlenberg and the team at ISFH and Leibniz Universität Hannover for the work performed in support of this publication. We would also like to thank Waldo Olavarria for growth of the III-V materials and Michelle Young for help with cell processing. This work was authored by Alliance for Sustainable Energy, LLC, the manager and operator of the National Renewable Energy Laboratory for the U.S. Department of Energy (DOE) under Contract No. DE-AC36-08GO28308. Funding provided by the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Office under contract number DE-00034911. The views expressed in the article do not necessarily represent the views of the DOE or the U.S. Government. Work at ISFH was supported by the German Federal Ministry for Economic Affairs and Energy within the framework of the 27plus6 project (FKZ:03EE1056A) and the German State of Lower Saxony. Conceptualization: K.T.V. and A.C.T. Methodology: E.L.W. W.E.M. M.R. K.T.V. R.P. and A.C.T. Software: J.F.G. Investigation: K.T.V. J.F.G. M.R. H.S-H. S.J. and T.R.K. Writing – original draft: K.T.V. Writing – Review and Editing: K.T.V. E.L.W. J.F.G. W.E.M. H.S-H. M.R. R.P. and A.C.T. Visualization: K.T.V. J.F.G. E.L.W. W.E.M. T.R.K. and A.C.T. Supervision: A.C.T. (Lead), J.F.G. and E.L.W. (Supporting). Project administration and funding acquisition: A.C.T. and E.L.W. Emily Warren and Adele Tamboli hold a patent related to III-V/Si tandem cells: US10256093B2. Kaitlyn VanSant is currently a NASA Postdoc Program Fellow, affiliated with NASA's Glenn Research Center.
PY - 2022/9/16
Y1 - 2022/9/16
N2 - The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that both tandem cells exhibit the same efficiency (21.3%), thereby demonstrating that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.
AB - The pursuit of ever-higher solar cell efficiencies has focused heavily on multijunction technologies. In tandem cells, subcells are typically either contacted via two terminals (2T) or four terminals (4T). Simulations show that the less-common three-terminal (3T) design may be comparable to 4T tandem cells in its compatibility with a range of materials, operating conditions, and methods for subcell integration, yet the 3T design circumvents shading losses of the 4T intermediate conductive layers. This study analyzes the performance of two superstrate 3T III-V-on-Si (III-V//Si) tandem cells: One has slightly greater current contribution from the Si bottom cell (GaInP//Si) and the other has substantially greater current contribution from the GaAs top cell (GaAs//Si). Our results show that both tandem cells exhibit the same efficiency (21.3%), thereby demonstrating that the third terminal allows for flexibility in the selection of the top cell material, similar to the 4T design.
KW - Electronic materials
KW - Energy materials
KW - Materials science
UR - http://www.scopus.com/inward/record.url?scp=85137038238&partnerID=8YFLogxK
U2 - 10.1016/j.isci.2022.104950
DO - 10.1016/j.isci.2022.104950
M3 - Article
AN - SCOPUS:85137038238
VL - 25
JO - iScience
JF - iScience
IS - 9
M1 - 104950
ER -