Details
Originalsprache | Englisch |
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Titel des Sammelwerks | 2010 IEEE MTT-S International Microwave Symposium, MTT 2010 |
Seiten | 332-335 |
Seitenumfang | 4 |
Publikationsstatus | Veröffentlicht - 2010 |
Veranstaltung | 2010 IEEE MTT-S International Microwave Symposium, MTT 2010 - Anaheim, CA, USA / Vereinigte Staaten Dauer: 23 Mai 2010 → 28 Mai 2010 |
Publikationsreihe
Name | IEEE MTT-S International Microwave Symposium Digest |
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ISSN (Print) | 0149-645X |
Abstract
This paper presents a new inverse class-D output matching network suitable for dynamic load modulation. The proposed matching network can synthesis the optimum load impedance at the fundamental as well as the necessary terminations at the 2nd and the 3rd harmonic, additionally it allows separate control over the imaginary and real part of the admittance at the fundamental. For load modulation applications an adaptive λ/4 line will be presented. An inverse class-D GaN power amplifier at 1 GHz based on the new output matching network is designed and measured. The measured amplifier has a maximum power added efficiency of 74 % and maximum output power of 40 dBm. Through using the adaptive λ/4 line the amplifier can achieve a PAE of more than 50 % at an output power of 32 dBm, which gives an efficiency improvement of more than 25 % over an 8 dB output dynamic range.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Strahlung
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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2010 IEEE MTT-S International Microwave Symposium, MTT 2010. 2010. S. 332-335 5517876 (IEEE MTT-S International Microwave Symposium Digest).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - A novel inverse class-D output matching network and its application to dynamic load modulation
AU - El Din, Mohamed Gamal
AU - Geck, Bernd
AU - Rolfs, Ilona
AU - Eul, Hermann
PY - 2010
Y1 - 2010
N2 - This paper presents a new inverse class-D output matching network suitable for dynamic load modulation. The proposed matching network can synthesis the optimum load impedance at the fundamental as well as the necessary terminations at the 2nd and the 3rd harmonic, additionally it allows separate control over the imaginary and real part of the admittance at the fundamental. For load modulation applications an adaptive λ/4 line will be presented. An inverse class-D GaN power amplifier at 1 GHz based on the new output matching network is designed and measured. The measured amplifier has a maximum power added efficiency of 74 % and maximum output power of 40 dBm. Through using the adaptive λ/4 line the amplifier can achieve a PAE of more than 50 % at an output power of 32 dBm, which gives an efficiency improvement of more than 25 % over an 8 dB output dynamic range.
AB - This paper presents a new inverse class-D output matching network suitable for dynamic load modulation. The proposed matching network can synthesis the optimum load impedance at the fundamental as well as the necessary terminations at the 2nd and the 3rd harmonic, additionally it allows separate control over the imaginary and real part of the admittance at the fundamental. For load modulation applications an adaptive λ/4 line will be presented. An inverse class-D GaN power amplifier at 1 GHz based on the new output matching network is designed and measured. The measured amplifier has a maximum power added efficiency of 74 % and maximum output power of 40 dBm. Through using the adaptive λ/4 line the amplifier can achieve a PAE of more than 50 % at an output power of 32 dBm, which gives an efficiency improvement of more than 25 % over an 8 dB output dynamic range.
KW - λ/4 transformer
KW - Inverse class-D
KW - Load-modulation
KW - Power amplifiers
KW - Rat-race coupler
UR - http://www.scopus.com/inward/record.url?scp=77957772777&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2010.5517876
DO - 10.1109/MWSYM.2010.5517876
M3 - Conference contribution
AN - SCOPUS:77957772777
SN - 9781424477326
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 332
EP - 335
BT - 2010 IEEE MTT-S International Microwave Symposium, MTT 2010
T2 - 2010 IEEE MTT-S International Microwave Symposium, MTT 2010
Y2 - 23 May 2010 through 28 May 2010
ER -