Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 9194294 |
| Seiten (von - bis) | 3169-3178 |
| Seitenumfang | 10 |
| Fachzeitschrift | IEEE J. Solid State Circuits |
| Jahrgang | 55 |
| Ausgabenummer | 12 |
| Publikationsstatus | Veröffentlicht - 10 Sept. 2020 |
Abstract
Gallium nitride (GaN) transistors enable efficient and compact high-voltage power converters. In the state-of-the-art enhancement mode GaN-on-Si technology, a 650-V power transistor is formed as a lateral structure enabling monolithic integration with a driver and analog control circuits on one die. Offline power converters show a trend toward a higher level of integration, shifting from monolithic silicon (CMOS) to various integration levels in GaN technology. In this article, a monolithic, self-biased GaN buck converter for offline operation is presented, supporting both 110- and 230-V ac line voltage and providing up to 29-W output power. The converter shows a superior efficiency of 95.6 % and a very high level of integration in a 650-V p-GaN gate e-mode GaN-on-Si technology. Analog design techniques for GaN integration, such as an auto-zero comparator and a high-voltage supply regulator, are discussed. Experimental results of stand-alone circuit blocks and the full buck converter confirm the viability of monolithic GaN integration as a path toward compact and efficient offline power converters.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE J. Solid State Circuits, Jahrgang 55, Nr. 12, 9194294, 10.09.2020, S. 3169-3178.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - A Monolithic GaN-IC With Integrated Control Loop for 400-V Offline Buck Operation Achieving 95.6% Peak Efficiency
AU - Kaufmann, Maik
AU - Wicht, Bernhard
PY - 2020/9/10
Y1 - 2020/9/10
N2 - Gallium nitride (GaN) transistors enable efficient and compact high-voltage power converters. In the state-of-the-art enhancement mode GaN-on-Si technology, a 650-V power transistor is formed as a lateral structure enabling monolithic integration with a driver and analog control circuits on one die. Offline power converters show a trend toward a higher level of integration, shifting from monolithic silicon (CMOS) to various integration levels in GaN technology. In this article, a monolithic, self-biased GaN buck converter for offline operation is presented, supporting both 110- and 230-V ac line voltage and providing up to 29-W output power. The converter shows a superior efficiency of 95.6 % and a very high level of integration in a 650-V p-GaN gate e-mode GaN-on-Si technology. Analog design techniques for GaN integration, such as an auto-zero comparator and a high-voltage supply regulator, are discussed. Experimental results of stand-alone circuit blocks and the full buck converter confirm the viability of monolithic GaN integration as a path toward compact and efficient offline power converters.
AB - Gallium nitride (GaN) transistors enable efficient and compact high-voltage power converters. In the state-of-the-art enhancement mode GaN-on-Si technology, a 650-V power transistor is formed as a lateral structure enabling monolithic integration with a driver and analog control circuits on one die. Offline power converters show a trend toward a higher level of integration, shifting from monolithic silicon (CMOS) to various integration levels in GaN technology. In this article, a monolithic, self-biased GaN buck converter for offline operation is presented, supporting both 110- and 230-V ac line voltage and providing up to 29-W output power. The converter shows a superior efficiency of 95.6 % and a very high level of integration in a 650-V p-GaN gate e-mode GaN-on-Si technology. Analog design techniques for GaN integration, such as an auto-zero comparator and a high-voltage supply regulator, are discussed. Experimental results of stand-alone circuit blocks and the full buck converter confirm the viability of monolithic GaN integration as a path toward compact and efficient offline power converters.
KW - GaN integration
KW - bootstrap circuit
KW - charge pump
KW - enhancement mode gallium nitride (e-mode GaN) transistors
KW - gate loop
KW - n-type only design
KW - offline
KW - power converters
KW - self-biased operation
UR - http://www.scopus.com/inward/record.url?scp=85090983448&partnerID=8YFLogxK
U2 - 10.1109/jssc.2020.3018404
DO - 10.1109/jssc.2020.3018404
M3 - Article
VL - 55
SP - 3169
EP - 3178
JO - IEEE J. Solid State Circuits
JF - IEEE J. Solid State Circuits
SN - 1558-173X
IS - 12
M1 - 9194294
ER -