Details
| Originalsprache | Englisch |
|---|---|
| Titel des Sammelwerks | ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference |
| Seiten | 256-259 |
| Seitenumfang | 4 |
| Publikationsstatus | Veröffentlicht - 2007 |
| Extern publiziert | Ja |
| Veranstaltung | ESSCIRC 2007 - 33rd European Solid-State Circuits Conference - Munich, Deutschland Dauer: 11 Sept. 2007 → 13 Sept. 2007 |
Publikationsreihe
| Name | ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference |
|---|
Abstract
A configurable High-Side/Low-Side driver (HSD/LSD) is presented. The operating mode of this driver depends just upon external connection. The circuit incorporates improved protection circuitry using modified Zener diodes. These diodes are isolated, allowing large negative voltages at source and gate of the switch device. Together with an isolated output stage of the driving circuit, this results in high negative source and gate voltages for the HSD configuration, leading to faster switch-off. This integrated solution with fast and similar HSD/LSD switching times combines the advantages of integrated circuits and the discrete solutions that were used for fast switching HSD up to now, as well as the advantages of both HSD and LSD. Experimental results in a 0.35/μm BiCMOS technology show that the gate can drop as low as -28V in the high-side configuration. In the low-side configuration, the drain can rise as high as 45V. In further measurements the configurable driver shows an excellent behaviour both for high-side and low-side in a H-bridge motor driver.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
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- BibTex
- RIS
ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. S. 256-259 4430292 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference).
Publikation: Beitrag in Buch/Bericht/Sammelwerk/Konferenzband › Aufsatz in Konferenzband › Forschung › Peer-Review
}
TY - GEN
T1 - A configurable high-side/ low-side driver
AU - Wendt, Michael
AU - Thoma, Lenz
AU - Wicht, Bernhard
AU - Schmitt-Landsiedel, Doris
PY - 2007
Y1 - 2007
N2 - A configurable High-Side/Low-Side driver (HSD/LSD) is presented. The operating mode of this driver depends just upon external connection. The circuit incorporates improved protection circuitry using modified Zener diodes. These diodes are isolated, allowing large negative voltages at source and gate of the switch device. Together with an isolated output stage of the driving circuit, this results in high negative source and gate voltages for the HSD configuration, leading to faster switch-off. This integrated solution with fast and similar HSD/LSD switching times combines the advantages of integrated circuits and the discrete solutions that were used for fast switching HSD up to now, as well as the advantages of both HSD and LSD. Experimental results in a 0.35/μm BiCMOS technology show that the gate can drop as low as -28V in the high-side configuration. In the low-side configuration, the drain can rise as high as 45V. In further measurements the configurable driver shows an excellent behaviour both for high-side and low-side in a H-bridge motor driver.
AB - A configurable High-Side/Low-Side driver (HSD/LSD) is presented. The operating mode of this driver depends just upon external connection. The circuit incorporates improved protection circuitry using modified Zener diodes. These diodes are isolated, allowing large negative voltages at source and gate of the switch device. Together with an isolated output stage of the driving circuit, this results in high negative source and gate voltages for the HSD configuration, leading to faster switch-off. This integrated solution with fast and similar HSD/LSD switching times combines the advantages of integrated circuits and the discrete solutions that were used for fast switching HSD up to now, as well as the advantages of both HSD and LSD. Experimental results in a 0.35/μm BiCMOS technology show that the gate can drop as low as -28V in the high-side configuration. In the low-side configuration, the drain can rise as high as 45V. In further measurements the configurable driver shows an excellent behaviour both for high-side and low-side in a H-bridge motor driver.
UR - http://www.scopus.com/inward/record.url?scp=44849088204&partnerID=8YFLogxK
U2 - 10.1109/ESSCIRC.2007.4430292
DO - 10.1109/ESSCIRC.2007.4430292
M3 - Conference contribution
AN - SCOPUS:44849088204
SN - 1424411254
SN - 9781424411252
T3 - ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
SP - 256
EP - 259
BT - ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
T2 - ESSCIRC 2007 - 33rd European Solid-State Circuits Conference
Y2 - 11 September 2007 through 13 September 2007
ER -