Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 207-210 |
| Seitenumfang | 4 |
| Fachzeitschrift | IEEE Solid-State Circuits Letters |
| Jahrgang | 7 |
| Frühes Online-Datum | 7 Juni 2024 |
| Publikationsstatus | Veröffentlicht - 7 Juni 2024 |
Abstract
Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.
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in: IEEE Solid-State Circuits Letters, Jahrgang 7, 07.06.2024, S. 207-210.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - A 500V, 6.25MHz GaN-IC With Gate Driver and Level Shifter for Off-Line Power Supplies
AU - Deneke, Niklas
AU - Wicht, Bernhard
N1 - Publisher Copyright: © 2018 IEEE.
PY - 2024/6/7
Y1 - 2024/6/7
N2 - Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.
AB - Gallium Nitride (GaN) technology enables essential progress in energy efficiency and density, especially in off-line power supplies. This letter presents a monolithic GaN-IC, including a half-bridge, formed by two high-voltage power FETs with respective gate drivers and a high-voltage level shifter, forming a signal interface between high-side and low-side domain, making use of a GaN-on-SOI technology. Verified by experimental results, it achieves 500-V switching at 6.25 MHz and is thus well suited for off-line power supplies.
KW - GaN
KW - Gallium nitride
KW - Gate drivers
KW - High-voltage techniques
KW - Logic gates
KW - Protection
KW - Resistors
KW - Switches
KW - gate driver
KW - high-voltage level shifter
KW - integration
KW - monolithic
KW - off-line power conversion
KW - Gallium nitride (GaN)
UR - http://www.scopus.com/inward/record.url?scp=85195425536&partnerID=8YFLogxK
U2 - 10.1109/lssc.2024.3411390
DO - 10.1109/lssc.2024.3411390
M3 - Article
VL - 7
SP - 207
EP - 210
JO - IEEE Solid-State Circuits Letters
JF - IEEE Solid-State Circuits Letters
SN - 2573-9603
ER -