A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing

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OriginalspracheEnglisch
Titel des Sammelwerks2017 IEEE International Solid-State Circuits Conference (ISSCC)
Herausgeber/-innenLaura C. Fujino
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten432-433
Seitenumfang2
ISBN (elektronisch)9781509037582
ISBN (Print)9781509037599
PublikationsstatusVeröffentlicht - 2017
Extern publiziertJa
Veranstaltung64th IEEE International Solid-State Circuits Conference, ISSCC 2017 - San Francisco, USA / Vereinigte Staaten
Dauer: 5 Feb. 20179 Feb. 2017

Publikationsreihe

NameDigest of Technical Papers - IEEE International Solid-State Circuits Conference
Band60
ISSN (Print)0193-6530
ISSN (elektronisch)2376-8606

Abstract

More and more power electronics applications utilize GaN transistors as they enable higher switching frequencies in comparison to conventional Si devices. Faster switching shrinks down the size of passives and enables compact solutions in applications like renewable energy, electrical cars and home appliances. GaN transistors benefit from ∼10× smaller gate charge QG and gate drive voltages in the range of typically 5V vs. ∼15V for Si.

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A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing. / Seidel, Achim; Wicht, Bernhard.
2017 IEEE International Solid-State Circuits Conference (ISSCC). Hrsg. / Laura C. Fujino. Institute of Electrical and Electronics Engineers Inc., 2017. S. 432-433 7870446 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Band 60).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Seidel, A & Wicht, B 2017, A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing. in LC Fujino (Hrsg.), 2017 IEEE International Solid-State Circuits Conference (ISSCC)., 7870446, Digest of Technical Papers - IEEE International Solid-State Circuits Conference, Bd. 60, Institute of Electrical and Electronics Engineers Inc., S. 432-433, 64th IEEE International Solid-State Circuits Conference, ISSCC 2017, San Francisco, USA / Vereinigte Staaten, 5 Feb. 2017. https://doi.org/10.1109/ISSCC.2017.7870446
Seidel, A., & Wicht, B. (2017). A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing. In L. C. Fujino (Hrsg.), 2017 IEEE International Solid-State Circuits Conference (ISSCC) (S. 432-433). Artikel 7870446 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference; Band 60). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISSCC.2017.7870446
Seidel A, Wicht B. A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing. in Fujino LC, Hrsg., 2017 IEEE International Solid-State Circuits Conference (ISSCC). Institute of Electrical and Electronics Engineers Inc. 2017. S. 432-433. 7870446. (Digest of Technical Papers - IEEE International Solid-State Circuits Conference). doi: 10.1109/ISSCC.2017.7870446
Seidel, Achim ; Wicht, Bernhard. / A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing. 2017 IEEE International Solid-State Circuits Conference (ISSCC). Hrsg. / Laura C. Fujino. Institute of Electrical and Electronics Engineers Inc., 2017. S. 432-433 (Digest of Technical Papers - IEEE International Solid-State Circuits Conference).
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