Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 3816-3824 |
| Seitenumfang | 9 |
| Fachzeitschrift | IEEE Journal of Solid-State Circuits |
| Jahrgang | 57 |
| Ausgabenummer | 12 |
| Publikationsstatus | Veröffentlicht - 8 Sept. 2022 |
Abstract
This work presents an offline power supply with fully integrated power stage in 0.18 <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m high-voltage (HV) CMOS silicon on insulator (SOI). It supports both ac–dc and dc–dc conversion from 15–400 V input down to 3.3–10 V output and is optimized for applications below 300 mW such as the Internet of Things (IoT), smart home, and e-mobility. An active zero-crossing buffer enables on-chip integration of the HV buffer capacitor. Below 150 V, constant on-time control is based on voltage intervals, sensed by ten HV threshold-detection circuits. Above 150 V, the converter operates in the resonant mode. It achieves a superior power density of 458 mW/cm<inline-formula> <tex-math notation="LaTeX">$^{3}$</tex-math> </inline-formula> and 84% peak efficiency.
ASJC Scopus Sachgebiete
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE Journal of Solid-State Circuits, Jahrgang 57, Nr. 12, 08.09.2022, S. 3816-3824.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - A 110/230 V AC and 15–400 V DC 0.3 W Power-Supply IC With Integrated Active Zero-Crossing Buffer
AU - Rindfleisch, Christoph
AU - Wicht, Bernhard
PY - 2022/9/8
Y1 - 2022/9/8
N2 - This work presents an offline power supply with fully integrated power stage in 0.18 $\mu$ m high-voltage (HV) CMOS silicon on insulator (SOI). It supports both ac–dc and dc–dc conversion from 15–400 V input down to 3.3–10 V output and is optimized for applications below 300 mW such as the Internet of Things (IoT), smart home, and e-mobility. An active zero-crossing buffer enables on-chip integration of the HV buffer capacitor. Below 150 V, constant on-time control is based on voltage intervals, sensed by ten HV threshold-detection circuits. Above 150 V, the converter operates in the resonant mode. It achieves a superior power density of 458 mW/cm $^{3}$ and 84% peak efficiency.
AB - This work presents an offline power supply with fully integrated power stage in 0.18 $\mu$ m high-voltage (HV) CMOS silicon on insulator (SOI). It supports both ac–dc and dc–dc conversion from 15–400 V input down to 3.3–10 V output and is optimized for applications below 300 mW such as the Internet of Things (IoT), smart home, and e-mobility. An active zero-crossing buffer enables on-chip integration of the HV buffer capacitor. Below 150 V, constant on-time control is based on voltage intervals, sensed by ten HV threshold-detection circuits. Above 150 V, the converter operates in the resonant mode. It achieves a superior power density of 458 mW/cm $^{3}$ and 84% peak efficiency.
KW - ac–dc converter
KW - Capacitors
KW - dc–dc converter
KW - Density measurement
KW - high voltage (HV)
KW - light-load efficient
KW - power density
KW - Power generation
KW - Power system measurements
KW - silicon on insulator (SOI)
KW - Switches
KW - Switching frequency
KW - Zero current switching
KW - dc-dc converter
KW - ac-dc converter
UR - http://www.scopus.com/inward/record.url?scp=85137936166&partnerID=8YFLogxK
U2 - 10.1109/JSSC.2022.3199653
DO - 10.1109/JSSC.2022.3199653
M3 - Article
AN - SCOPUS:85137936166
VL - 57
SP - 3816
EP - 3824
JO - IEEE Journal of Solid-State Circuits
JF - IEEE Journal of Solid-State Circuits
SN - 0018-9200
IS - 12
ER -