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3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschung

Autorschaft

  • Gundars Ratnieks
  • Andris Muiznieks
  • Georg Raming
  • Alfred Mühlbauer

Organisationseinheiten

Details

OriginalspracheEnglisch
Titel des SammelwerksProceedings of the International Colloquium Modelling of Material Processing
UntertitelRiga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover
ErscheinungsortRiga
Seiten30-35
PublikationsstatusVeröffentlicht - 1999
VeranstaltungInternational Scientific Colloquium Modelling of Material Processing - Riga
Dauer: 28 Mai 199929 Mai 1999

Zitieren

3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth. / Ratnieks, Gundars; Muiznieks, Andris; Raming, Georg et al.
Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. S. 30-35.

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschung

Ratnieks, G, Muiznieks, A, Raming, G, Mühlbauer, A & Buligins, L 1999, 3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, S. 30-35, International Scientific Colloquium Modelling of Material Processing, Riga, 28 Mai 1999.
Ratnieks, G., Muiznieks, A., Raming, G., Mühlbauer, A., & Buligins, L. (1999). 3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth. In Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover (S. 30-35).
Ratnieks G, Muiznieks A, Raming G, Mühlbauer A, Buligins L. 3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth. in Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga. 1999. S. 30-35
Ratnieks, Gundars ; Muiznieks, Andris ; Raming, Georg et al. / 3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth. Proceedings of the International Colloquium Modelling of Material Processing: Riga, May 28 - 29, 1999 / organized by Laboratory for Mathematical Modelling of Environmental and Technological Processes, University of Latvia and Institute for Electroheat, University of Hannover . Riga, 1999. S. 30-35
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title = "3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth",
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TY - GEN

T1 - 3D modelling of magnetic, temperature, hydrodynamic and dopant concentration fields during FZ silicon crystal growth

AU - Ratnieks, Gundars

AU - Muiznieks, Andris

AU - Raming, Georg

AU - Mühlbauer, Alfred

AU - Buligins, L.

PY - 1999

Y1 - 1999

M3 - Conference contribution

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T2 - International Scientific Colloquium Modelling of Material Processing

Y2 - 28 May 1999 through 29 May 1999

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