2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Autoren

  • Saba Gharibzadeh
  • Ihteaz M. Hossain
  • Paul Fassl
  • Adrian Mertens
  • Soren Schafer
  • Michael Rienacker
  • Tobias Wietler
  • Robby Peibst
  • Bryce S. Richards
  • Ulrich W. Paetzold

Externe Organisationen

  • Karlsruher Institut für Technologie (KIT)
  • Institut für Solarenergieforschung GmbH (ISFH)
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Titel des Sammelwerks2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Herausgeber (Verlag)Institute of Electrical and Electronics Engineers Inc.
Seiten1344-1345
Seitenumfang2
ISBN (elektronisch)9781728161150
ISBN (Print)978-1-7281-6116-7
PublikationsstatusVeröffentlicht - 2020
Veranstaltung47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Kanada
Dauer: 15 Juni 202021 Aug. 2020

Publikationsreihe

NameConference Record of the IEEE Photovoltaic Specialists Conference
Band2020-June
ISSN (Print)0160-8371

Abstract

Wide-bandgap perovskite top solar cells (PSCs) with optimal bandgap (Eg) are key to boost the efficiency of perovskite/Si tandem devices beyond the Shockley-Queisser limit for single-junction solar cells. However, the large open circuit voltage (Voc) deficit in the optimal bandgap range and the poor transmission of the top semi-transparent perovskite solar cells (s-PSCs) restricts the development in this field. Here, we present a novel 2D/3D perovskite heterostructure architecture to reduce the voltage deficit in PSCs. The reduced voltage deficit is a result of the decreased non-radiative recombination losses at the perovskite/hole-transport layer interface. Employing the 2D/3D perovskite heterostructure, efficient four-terminal (4T) perovskite/Si tandem solar cells with a stabilized power conversion efficiency (PCE) of up to 25.7% is demonstrated. In order to improve the PCE further, we present alternative transparent conductive oxide electrodes that reduce the parasitic absorption and reflection losses and enhances the transmission in the near infrared wavelengths, leading to a potential PCE of 27.4% for 4T perovskite/c-Si tandem devices.

ASJC Scopus Sachgebiete

Zitieren

2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics. / Gharibzadeh, Saba; Hossain, Ihteaz M.; Fassl, Paul et al.
2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. S. 1344-1345 9300952 (Conference Record of the IEEE Photovoltaic Specialists Conference; Band 2020-June).

Publikation: Beitrag in Buch/Bericht/Sammelwerk/KonferenzbandAufsatz in KonferenzbandForschungPeer-Review

Gharibzadeh, S, Hossain, IM, Fassl, P, Mertens, A, Schafer, S, Rienacker, M, Wietler, T, Peibst, R, Richards, BS & Paetzold, UW 2020, 2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics. in 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020., 9300952, Conference Record of the IEEE Photovoltaic Specialists Conference, Bd. 2020-June, Institute of Electrical and Electronics Engineers Inc., S. 1344-1345, 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Kanada, 15 Juni 2020. https://doi.org/10.1109/PVSC45281.2020.9300952
Gharibzadeh, S., Hossain, I. M., Fassl, P., Mertens, A., Schafer, S., Rienacker, M., Wietler, T., Peibst, R., Richards, B. S., & Paetzold, U. W. (2020). 2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics. In 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 (S. 1344-1345). Artikel 9300952 (Conference Record of the IEEE Photovoltaic Specialists Conference; Band 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC45281.2020.9300952
Gharibzadeh S, Hossain IM, Fassl P, Mertens A, Schafer S, Rienacker M et al. 2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics. in 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. S. 1344-1345. 9300952. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC45281.2020.9300952
Gharibzadeh, Saba ; Hossain, Ihteaz M. ; Fassl, Paul et al. / 2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics. 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. S. 1344-1345 (Conference Record of the IEEE Photovoltaic Specialists Conference).
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title = "2D Surface Passivation in Semi-transparent Perovskite Top Solar Cells with Engineered Bandgap for Tandem Photovoltaics",
abstract = "Wide-bandgap perovskite top solar cells (PSCs) with optimal bandgap (Eg) are key to boost the efficiency of perovskite/Si tandem devices beyond the Shockley-Queisser limit for single-junction solar cells. However, the large open circuit voltage (Voc) deficit in the optimal bandgap range and the poor transmission of the top semi-transparent perovskite solar cells (s-PSCs) restricts the development in this field. Here, we present a novel 2D/3D perovskite heterostructure architecture to reduce the voltage deficit in PSCs. The reduced voltage deficit is a result of the decreased non-radiative recombination losses at the perovskite/hole-transport layer interface. Employing the 2D/3D perovskite heterostructure, efficient four-terminal (4T) perovskite/Si tandem solar cells with a stabilized power conversion efficiency (PCE) of up to 25.7% is demonstrated. In order to improve the PCE further, we present alternative transparent conductive oxide electrodes that reduce the parasitic absorption and reflection losses and enhances the transmission in the near infrared wavelengths, leading to a potential PCE of 27.4% for 4T perovskite/c-Si tandem devices.",
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AU - Gharibzadeh, Saba

AU - Hossain, Ihteaz M.

AU - Fassl, Paul

AU - Mertens, Adrian

AU - Schafer, Soren

AU - Rienacker, Michael

AU - Wietler, Tobias

AU - Peibst, Robby

AU - Richards, Bryce S.

AU - Paetzold, Ulrich W.

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KW - poly-Si

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