26%-efficient and 2 cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • S. Schäfer
  • Felix Haase
  • Christina Hollemann
  • J. Hensen
  • Jan Krügener
  • Rolf Brendel
  • Robby Peibst

Externe Organisationen

  • Institut für Solarenergieforschung GmbH (ISFH)
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Details

OriginalspracheEnglisch
Aufsatznummer110021
FachzeitschriftSolar Energy Materials and Solar Cells
Jahrgang200
Frühes Online-Datum1 Juli 2019
PublikationsstatusVeröffentlicht - 15 Sept. 2019

Abstract

Perimeter recombination is a relevant loss mechanism, in particular for cells with a large perimeter-to-area ratio and with poorly passivated edges, e.g., cut or cleaved solar cells for shingled modules. We experimentally demonstrate that cut edges can be well passivated during front-end processing. The resulting cells have an efficiency of 26%. The designated cell area of our lab-type highly efficient cells is smaller than the total area of the wafer. This causes recombination losses in the masked perimeter region. We separate the active cell area from the wafer on two sides of the cell by slits to reduce the transport of carriers into the perimeter region. We apply a diffusion model to describe impact of the slits on the perimeter recombination. The slits have an effective surface recombination velocity of down to 9 cm/s, depending on the resistivity of the base. For a base resistivity of 80 Ωcm, the average cell efficiency increases by 0.7 %abs as compared to embedded cells and by 2.3 %abs as compared to laser-cut cells due to the passivated slits.

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26%-efficient and 2 cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges. / Schäfer, S.; Haase, Felix; Hollemann, Christina et al.
in: Solar Energy Materials and Solar Cells, Jahrgang 200, 110021, 15.09.2019.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Schäfer S, Haase F, Hollemann C, Hensen J, Krügener J, Brendel R et al. 26%-efficient and 2 cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges. Solar Energy Materials and Solar Cells. 2019 Sep 15;200:110021. Epub 2019 Jul 1. doi: 10.1016/j.solmat.2019.110021
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title = "26%-efficient and 2 cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges",
abstract = "Perimeter recombination is a relevant loss mechanism, in particular for cells with a large perimeter-to-area ratio and with poorly passivated edges, e.g., cut or cleaved solar cells for shingled modules. We experimentally demonstrate that cut edges can be well passivated during front-end processing. The resulting cells have an efficiency of 26%. The designated cell area of our lab-type highly efficient cells is smaller than the total area of the wafer. This causes recombination losses in the masked perimeter region. We separate the active cell area from the wafer on two sides of the cell by slits to reduce the transport of carriers into the perimeter region. We apply a diffusion model to describe impact of the slits on the perimeter recombination. The slits have an effective surface recombination velocity of down to 9 cm/s, depending on the resistivity of the base. For a base resistivity of 80 Ωcm, the average cell efficiency increases by 0.7 %abs as compared to embedded cells and by 2.3 %abs as compared to laser-cut cells due to the passivated slits.",
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T1 - 26%-efficient and 2 cm narrow interdigitated back contact silicon solar cells with passivated slits on two edges

AU - Schäfer, S.

AU - Haase, Felix

AU - Hollemann, Christina

AU - Hensen, J.

AU - Krügener, Jan

AU - Brendel, Rolf

AU - Peibst, Robby

N1 - Funding information: The authors thank the Federal Ministry of Economic Affairs and Energy (BMWi) (grant number 0325827A , project 26+) and the State of Lower Saxony for funding this work, Hilke Fischer, Annika Raugewitz, Sabine Schmidt (all from ISFH), Raymond Zieseniss and Guido Glowatzki (both from Institute of Electronic Materials and Devices) for sample processing and Tobias Neubert and David Sylla (both ISFH) for fruitful discussions about the laser process.

PY - 2019/9/15

Y1 - 2019/9/15

N2 - Perimeter recombination is a relevant loss mechanism, in particular for cells with a large perimeter-to-area ratio and with poorly passivated edges, e.g., cut or cleaved solar cells for shingled modules. We experimentally demonstrate that cut edges can be well passivated during front-end processing. The resulting cells have an efficiency of 26%. The designated cell area of our lab-type highly efficient cells is smaller than the total area of the wafer. This causes recombination losses in the masked perimeter region. We separate the active cell area from the wafer on two sides of the cell by slits to reduce the transport of carriers into the perimeter region. We apply a diffusion model to describe impact of the slits on the perimeter recombination. The slits have an effective surface recombination velocity of down to 9 cm/s, depending on the resistivity of the base. For a base resistivity of 80 Ωcm, the average cell efficiency increases by 0.7 %abs as compared to embedded cells and by 2.3 %abs as compared to laser-cut cells due to the passivated slits.

AB - Perimeter recombination is a relevant loss mechanism, in particular for cells with a large perimeter-to-area ratio and with poorly passivated edges, e.g., cut or cleaved solar cells for shingled modules. We experimentally demonstrate that cut edges can be well passivated during front-end processing. The resulting cells have an efficiency of 26%. The designated cell area of our lab-type highly efficient cells is smaller than the total area of the wafer. This causes recombination losses in the masked perimeter region. We separate the active cell area from the wafer on two sides of the cell by slits to reduce the transport of carriers into the perimeter region. We apply a diffusion model to describe impact of the slits on the perimeter recombination. The slits have an effective surface recombination velocity of down to 9 cm/s, depending on the resistivity of the base. For a base resistivity of 80 Ωcm, the average cell efficiency increases by 0.7 %abs as compared to embedded cells and by 2.3 %abs as compared to laser-cut cells due to the passivated slits.

KW - Back-contact solar cell

KW - Edge loss

KW - Passivating contacts

KW - Perimeter recombination

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DO - 10.1016/j.solmat.2019.110021

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