Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 148-152 |
| Seitenumfang | 5 |
| Fachzeitschrift | physica status solidi (RRL) – Rapid Research Letters |
| Jahrgang | 10 |
| Ausgabenummer | 2 |
| Publikationsstatus | Veröffentlicht - 22 Feb. 2016 |
Abstract
Plasma enhanced chemical vapor deposition (PECVD) is applied to deposit boron silicate glasses (BSG) acting as boron diffusion source during the fabrication of n-type silicon solar cells. We characterize the resulting boron-diffused emitter after boron drive-in from PECVD BSG by measuring the sheet resistances R sheet,B and saturation current densities J 0,B. For process optimization, we vary the PECVD deposition parameters such as the gas flows of the precursor gases silane and diborane and the PECVD BSG layer thickness. We find an optimum gas flow ratio of SiH 4/B 2H 6= 8% and layer thickness of 40 nm. After boron drive in from these PECVD BSG diffusion sources, a low J 0,B values of 21 fA/cm 2 is reached for R sheet,B = 70 Ω/□. The optimized PECVD BSG layers together with a co-diffusion process are implemented into the fabrication process of passivated emitter and rear totally diffused (PERT) back junction (BJ) cells on n-type silicon. An independently confirmed energy conversion efficiency of 21.0% is achieved on 15.6 × 15.6 cm 2 cell area with a simplified process flow. This is the highest efficiency reported for a co-diffused n-type PERT BJ cell using PECVD BSG as diffusion source. A loss analysis shows a small contribution of 0.13 mW/cm 2 of the boron diffusion to the recombination loss proving the high quality of this diffusion source.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Allgemeine Materialwissenschaften
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
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in: physica status solidi (RRL) – Rapid Research Letters, Jahrgang 10, Nr. 2, 22.02.2016, S. 148-152.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - 21.0%-efficient co-diffused screen-printed n-type silicon solar cell with rear-side boron emitter
AU - Wehmeier, Nadine
AU - Lim, Bianca
AU - Nowack, Anja
AU - Schmidt, Jan
AU - Dullweber, Thorsten
AU - Brendel, Rolf
N1 - We acknowledge Miriam Berger, Anja Christ, and Till Brendemühl for n-PERT cell processing, Mircea Turcu for depositions and characterization of the PECVD layers, Sarah Spätlich for diffusion optimization and David Sylla for laser processes. This work was funded by the German Federal Ministry for Economic Affairs and Energy under Grant 0325478 (SimpliHigh).
PY - 2016/2/22
Y1 - 2016/2/22
N2 - Plasma enhanced chemical vapor deposition (PECVD) is applied to deposit boron silicate glasses (BSG) acting as boron diffusion source during the fabrication of n-type silicon solar cells. We characterize the resulting boron-diffused emitter after boron drive-in from PECVD BSG by measuring the sheet resistances R sheet,B and saturation current densities J 0,B. For process optimization, we vary the PECVD deposition parameters such as the gas flows of the precursor gases silane and diborane and the PECVD BSG layer thickness. We find an optimum gas flow ratio of SiH 4/B 2H 6= 8% and layer thickness of 40 nm. After boron drive in from these PECVD BSG diffusion sources, a low J 0,B values of 21 fA/cm 2 is reached for R sheet,B = 70 Ω/□. The optimized PECVD BSG layers together with a co-diffusion process are implemented into the fabrication process of passivated emitter and rear totally diffused (PERT) back junction (BJ) cells on n-type silicon. An independently confirmed energy conversion efficiency of 21.0% is achieved on 15.6 × 15.6 cm 2 cell area with a simplified process flow. This is the highest efficiency reported for a co-diffused n-type PERT BJ cell using PECVD BSG as diffusion source. A loss analysis shows a small contribution of 0.13 mW/cm 2 of the boron diffusion to the recombination loss proving the high quality of this diffusion source.
AB - Plasma enhanced chemical vapor deposition (PECVD) is applied to deposit boron silicate glasses (BSG) acting as boron diffusion source during the fabrication of n-type silicon solar cells. We characterize the resulting boron-diffused emitter after boron drive-in from PECVD BSG by measuring the sheet resistances R sheet,B and saturation current densities J 0,B. For process optimization, we vary the PECVD deposition parameters such as the gas flows of the precursor gases silane and diborane and the PECVD BSG layer thickness. We find an optimum gas flow ratio of SiH 4/B 2H 6= 8% and layer thickness of 40 nm. After boron drive in from these PECVD BSG diffusion sources, a low J 0,B values of 21 fA/cm 2 is reached for R sheet,B = 70 Ω/□. The optimized PECVD BSG layers together with a co-diffusion process are implemented into the fabrication process of passivated emitter and rear totally diffused (PERT) back junction (BJ) cells on n-type silicon. An independently confirmed energy conversion efficiency of 21.0% is achieved on 15.6 × 15.6 cm 2 cell area with a simplified process flow. This is the highest efficiency reported for a co-diffused n-type PERT BJ cell using PECVD BSG as diffusion source. A loss analysis shows a small contribution of 0.13 mW/cm 2 of the boron diffusion to the recombination loss proving the high quality of this diffusion source.
KW - Boron silicate glass
KW - Diffusion
KW - Passivated emitter and rear totally diffused solar cells
KW - Plasma enhanced chemical vapor deposition
KW - Silicon
UR - http://www.scopus.com/inward/record.url?scp=84958694928&partnerID=8YFLogxK
U2 - 10.1002/pssr.201510393
DO - 10.1002/pssr.201510393
M3 - Article
VL - 10
SP - 148
EP - 152
JO - physica status solidi (RRL) – Rapid Research Letters
JF - physica status solidi (RRL) – Rapid Research Letters
SN - 1862-6270
IS - 2
ER -