Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 381-386 |
| Seitenumfang | 6 |
| Fachzeitschrift | Progress in Photovoltaics: Research and Applications |
| Jahrgang | 13 |
| Ausgabenummer | 5 |
| Frühes Online-Datum | 27 Juni 2005 |
| Publikationsstatus | Elektronisch veröffentlicht (E-Pub) - 27 Juni 2005 |
| Extern publiziert | Ja |
Abstract
We have developed a crystalline silicon solar cell with amorphous silicon (a-Si:H) rear-surface passivation based on a simple process. The a-Si:H layer is deposited at 225°C by plasma-enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a-Si:H-passivated rear. The base contacts are formed by COSIMA (contact formation to a-Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a-Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5±0-2mΩcm 2 on low-resistivity (0-5 Ωcm) p-type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20-1% under one-sun standard testing conditions for a 4cm2 large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Ziele für nachhaltige Entwicklung
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Progress in Photovoltaics: Research and Applications, Jahrgang 13, Nr. 5, 27.06.2005, S. 381-386.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - 20.1%-efficient crystalline silicon solar cell with amorphous silicon rear-surface passivation
AU - Schaper, Martin
AU - Schmidt, Jan
AU - Plagwitz, Heiko
AU - Brendel, Rolf
PY - 2005/6/27
Y1 - 2005/6/27
N2 - We have developed a crystalline silicon solar cell with amorphous silicon (a-Si:H) rear-surface passivation based on a simple process. The a-Si:H layer is deposited at 225°C by plasma-enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a-Si:H-passivated rear. The base contacts are formed by COSIMA (contact formation to a-Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a-Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5±0-2mΩcm 2 on low-resistivity (0-5 Ωcm) p-type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20-1% under one-sun standard testing conditions for a 4cm2 large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation.
AB - We have developed a crystalline silicon solar cell with amorphous silicon (a-Si:H) rear-surface passivation based on a simple process. The a-Si:H layer is deposited at 225°C by plasma-enhanced chemical vapor deposition. An aluminum grid is evaporated onto the a-Si:H-passivated rear. The base contacts are formed by COSIMA (contact formation to a-Si:H passivated wafers by means of annealing) when subsequently depositing the front silicon nitride layer at 325°C. The a-Si:H underneath the aluminum fingers dissolves completely within the aluminum and an ohmic contact to the base is formed. This contacting scheme results in a very low contact resistance of 3.5±0-2mΩcm 2 on low-resistivity (0-5 Ωcm) p-type silicon, which is below that obtained for conventional Al/Si contacts. We achieve an independently confirmed energy conversion efficiency of 20-1% under one-sun standard testing conditions for a 4cm2 large cell. Measurements of the internal quantum efficiency show an improved rear surface passivation compared with reference cells with a silicon nitride rear passivation.
KW - Amorphous silicon
KW - High efficiency
KW - Local metallization
KW - Rear surface passivation
KW - Silicon solar cell
UR - http://www.scopus.com/inward/record.url?scp=22744457137&partnerID=8YFLogxK
U2 - 10.1002/pip.641
DO - 10.1002/pip.641
M3 - Article
AN - SCOPUS:22744457137
VL - 13
SP - 381
EP - 386
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 5
ER -