Details
Originalsprache | Englisch |
---|---|
Aufsatznummer | 191602 |
Fachzeitschrift | Applied Physics Letters |
Jahrgang | 113 |
Ausgabenummer | 19 |
Publikationsstatus | Veröffentlicht - 5 Nov. 2018 |
Abstract
Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.
ASJC Scopus Sachgebiete
- Physik und Astronomie (insg.)
- Physik und Astronomie (sonstige)
Zitieren
- Standard
- Harvard
- Apa
- Vancouver
- BibTex
- RIS
in: Applied Physics Letters, Jahrgang 113, Nr. 19, 191602, 05.11.2018.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - 1D ballistic transport channel probed by invasive and non-invasive contacts
AU - Aprojanz, Johannes
AU - Miccoli, Ilio
AU - Baringhaus, Jens
AU - Tegenkamp, Christoph
N1 - © 2018 Author(s).
PY - 2018/11/5
Y1 - 2018/11/5
N2 - Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.
AB - Epitaxially grown sidewall graphene nanoribbons show a robust quantum conductance of e2/h. By means of in-situ transport measurements with a nanoprobe system, we realized invasive and non-invasive 4-point-probe configurations. The invasiveness correlates with the contact resistance of the voltage probes. In particular, we achieved now non-invasive voltage probes revealing an almost zero resistance in a collinear 4 point-probe measurement. This proofs the ballistic nature of our epitaxially grown sidewall nanoribbons on SiC(0001) mesa structures.
UR - http://www.scopus.com/inward/record.url?scp=85056076088&partnerID=8YFLogxK
U2 - 10.1063/1.5054393
DO - 10.1063/1.5054393
M3 - Article
AN - SCOPUS:85056076088
VL - 113
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 19
M1 - 191602
ER -