Details
| Originalsprache | Englisch |
|---|---|
| Aufsatznummer | 6146417 |
| Seiten (von - bis) | 909-917 |
| Seitenumfang | 9 |
| Fachzeitschrift | IEEE Transactions on Electron Devices |
| Jahrgang | 59 |
| Ausgabenummer | 4 |
| Publikationsstatus | Veröffentlicht - 6 Feb. 2012 |
Abstract
We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum efficiency measurements and reproduced by 3-D simulations using Sentaurus Device. Since such a device simulation does not include resistive losses in the metallization, we use a network simulation to account for losses caused by the grid. Considering the optimal contact geometry, the simulations indicate the power losses in the emitter, at the rear-side contacts, in the base, and in the metallization grid to be in the same order of magnitude.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
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in: IEEE Transactions on Electron Devices, Jahrgang 59, Nr. 4, 6146417, 06.02.2012, S. 909-917.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - 19% Efficient Thin-Film Crystalline Silicon Solar Cells From Layer Transfer Using Porous Silicon
T2 - A Loss Analysis by Means of Three-Dimensional Simulations
AU - Petermann, Jan Hendrik
AU - Ohrdes, Tobias
AU - Altermatt, Pietro P.
AU - Eidelloth, Stefan
AU - Brendel, Rolf
PY - 2012/2/6
Y1 - 2012/2/6
N2 - We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum efficiency measurements and reproduced by 3-D simulations using Sentaurus Device. Since such a device simulation does not include resistive losses in the metallization, we use a network simulation to account for losses caused by the grid. Considering the optimal contact geometry, the simulations indicate the power losses in the emitter, at the rear-side contacts, in the base, and in the metallization grid to be in the same order of magnitude.
AB - We present a study about loss analysis in both-sides-contacted silicon solar cells from a porous silicon (PSI) layer transfer process. Experimental results achieved by a variation of the rear-side contact geometry are characterized by different techniques such as electroluminescence and quantum efficiency measurements and reproduced by 3-D simulations using Sentaurus Device. Since such a device simulation does not include resistive losses in the metallization, we use a network simulation to account for losses caused by the grid. Considering the optimal contact geometry, the simulations indicate the power losses in the emitter, at the rear-side contacts, in the base, and in the metallization grid to be in the same order of magnitude.
KW - Kerfless
KW - layer transfer
KW - loss analysis
KW - porous silicon (PSI)
UR - http://www.scopus.com/inward/record.url?scp=84859216766&partnerID=8YFLogxK
U2 - 10.1109/TED.2012.2183001
DO - 10.1109/TED.2012.2183001
M3 - Article
AN - SCOPUS:84859216766
VL - 59
SP - 909
EP - 917
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 4
M1 - 6146417
ER -