Details
| Originalsprache | Englisch |
|---|---|
| Seiten (von - bis) | 533-539 |
| Seitenumfang | 7 |
| Fachzeitschrift | Progress in Photovoltaics: Research and Applications |
| Jahrgang | 14 |
| Ausgabenummer | 6 |
| Publikationsstatus | Veröffentlicht - Sept. 2006 |
| Extern publiziert | Ja |
Abstract
High and stable lifetimes recently reported for n-type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we focus on back junction n+np+ solar cells featuring an easy-to-fabricate full-area screen-printed aluminiumalloyed rearp+ emitter. Independently confirmed record-high efficiencies have been achieved on n-type phosphorus-doped Czochralski-grown silicon material: 18-9% for laboratory-type n+np+ solar cells (4cm2) with shadow-mask evaporated front contact grid and 17-0% for front and rear screen-printed industrial-type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination.
ASJC Scopus Sachgebiete
- Werkstoffwissenschaften (insg.)
- Elektronische, optische und magnetische Materialien
- Energie (insg.)
- Erneuerbare Energien, Nachhaltigkeit und Umwelt
- Physik und Astronomie (insg.)
- Physik der kondensierten Materie
- Ingenieurwesen (insg.)
- Elektrotechnik und Elektronik
Ziele für nachhaltige Entwicklung
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in: Progress in Photovoltaics: Research and Applications, Jahrgang 14, Nr. 6, 09.2006, S. 533-539.
Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review
}
TY - JOUR
T1 - 19% efficient n-type czochralski silicon solar cells with screen-printed aluminium-alloyed rear emitter
AU - Schmiga, Christian
AU - Schmidt, Jan
AU - Nagel, Henning
PY - 2006/9
Y1 - 2006/9
N2 - High and stable lifetimes recently reported for n-type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we focus on back junction n+np+ solar cells featuring an easy-to-fabricate full-area screen-printed aluminiumalloyed rearp+ emitter. Independently confirmed record-high efficiencies have been achieved on n-type phosphorus-doped Czochralski-grown silicon material: 18-9% for laboratory-type n+np+ solar cells (4cm2) with shadow-mask evaporated front contact grid and 17-0% for front and rear screen-printed industrial-type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination.
AB - High and stable lifetimes recently reported for n-type silicon materials are an important and promising prerequisite for innovative solar cells. To exploit the advantages of the excellent electrical properties of n-type Si wafers for manufacturing simple and industrially feasible high-efficiency solar cells, we focus on back junction n+np+ solar cells featuring an easy-to-fabricate full-area screen-printed aluminiumalloyed rearp+ emitter. Independently confirmed record-high efficiencies have been achieved on n-type phosphorus-doped Czochralski-grown silicon material: 18-9% for laboratory-type n+np+ solar cells (4cm2) with shadow-mask evaporated front contact grid and 17-0% for front and rear screen-printed industrial-type cells (100 cm2). The electrical cell parameters were found to be perfectly stable under illumination.
KW - Aluminium-alloyed emitter
KW - Czochralski silicon solar cells
KW - n-type solar cells
KW - Rear junction
KW - Screen-printed aluminium emitter
KW - Solar cell efficiencies
UR - http://www.scopus.com/inward/record.url?scp=33748556502&partnerID=8YFLogxK
U2 - 10.1002/pip.725
DO - 10.1002/pip.725
M3 - Article
AN - SCOPUS:33748556502
VL - 14
SP - 533
EP - 539
JO - Progress in Photovoltaics: Research and Applications
JF - Progress in Photovoltaics: Research and Applications
SN - 1062-7995
IS - 6
ER -