TY - JOUR

T1 - 17.6% Efficient tricrystalline silicon solar cells with spatially uniform texture

AU - Schmiga, Christian

AU - Schmidt, Jan

AU - Metz, Axel

AU - Endrös, Arthur

AU - Hezel, Rudolf

PY - 2002/12/16

Y1 - 2002/12/16

N2 - Up to now solar cells fabricated on tricrystalline Czochralski-grown silicon (tri-Si) have shown relatively low short-circuit current densities of about 31-33 mA/cm2 because the three {110}-oriented grains cannot effectively be textured by commonly used anisotropic etching solutions. In this work, we have optimised a novel chemical texturing step for tri-Si and integrated it successfully into our solar cell process. Metal/insulator/semiconductor-contacted phosphorus.diffused n+p junction silicon solar cells with a silicon.dioxide-passivated rear surface and evaporated aluminium contacts were manufactured, featuring a spatially uniform surface texture over all three grains on both cell sides. Despite the simple processing sequence and cell structure, an independently confirmed record efficiency of 17.6% has been achieved. This excellent efficiency is mainly due to an increased short-circuit current density of 37mA/m2 obtained by substantially reduced reflection and enhanced light trapping.

AB - Up to now solar cells fabricated on tricrystalline Czochralski-grown silicon (tri-Si) have shown relatively low short-circuit current densities of about 31-33 mA/cm2 because the three {110}-oriented grains cannot effectively be textured by commonly used anisotropic etching solutions. In this work, we have optimised a novel chemical texturing step for tri-Si and integrated it successfully into our solar cell process. Metal/insulator/semiconductor-contacted phosphorus.diffused n+p junction silicon solar cells with a silicon.dioxide-passivated rear surface and evaporated aluminium contacts were manufactured, featuring a spatially uniform surface texture over all three grains on both cell sides. Despite the simple processing sequence and cell structure, an independently confirmed record efficiency of 17.6% has been achieved. This excellent efficiency is mainly due to an increased short-circuit current density of 37mA/m2 obtained by substantially reduced reflection and enhanced light trapping.

KW - Acid texturing

KW - Grain boundaries

KW - Light trapping

KW - Reflection

KW - Silicon solar cells

KW - Solar cell efficiencies

KW - Tricrystalline silicon

KW - Uniform surface texture

UR - http://www.scopus.com/inward/record.url?scp=0037238045&partnerID=8YFLogxK

U2 - 10.1002/pip.479

DO - 10.1002/pip.479

M3 - Article

AN - SCOPUS:0037238045

VL - 11

SP - 33

EP - 38

JO - Progress in Photovoltaics: Research and Applications

JF - Progress in Photovoltaics: Research and Applications

SN - 1062-7995

IS - 1

ER -