0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes 

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Autoren

  • H. D.B. Gottlob
  • T. Echtermeyer
  • M. Schmidt
  • T. Mollenhauer
  • J. K. Efavi
  • T. Wahlbrink
  • M. C. Lemme
  • M. Czernohorsky
  • E. Bugiel
  • A. Fissel
  • H. J. Osten
  • H. Kurz

Organisationseinheiten

Externe Organisationen

  • AMO GmbH
Forschungs-netzwerk anzeigen

Details

OriginalspracheEnglisch
Seiten (von - bis)814-816
Seitenumfang3
FachzeitschriftIEEE electron device letters
Jahrgang27
Ausgabenummer10
PublikationsstatusVeröffentlicht - 25 Sept. 2006

Abstract

In this letter, ultrathin gadolinium oxide (Gd2O3) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.

ASJC Scopus Sachgebiete

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0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes . / Gottlob, H. D.B.; Echtermeyer, T.; Schmidt, M. et al.
in: IEEE electron device letters, Jahrgang 27, Nr. 10, 25.09.2006, S. 814-816.

Publikation: Beitrag in Fachzeitschrift › Artikel › Forschung › Peer-Review

Gottlob, HDB, Echtermeyer, T, Schmidt, M, Mollenhauer, T, Efavi, JK, Wahlbrink, T, Lemme, MC, Czernohorsky, M, Bugiel, E, Fissel, A, Osten, HJ & Kurz, H 2006, '0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes ', IEEE electron device letters, Jg. 27, Nr. 10, S. 814-816. https://doi.org/10.1109/LED.2006.882581
Gottlob, H. D. B., Echtermeyer, T., Schmidt, M., Mollenhauer, T., Efavi, J. K., Wahlbrink, T., Lemme, M. C., Czernohorsky, M., Bugiel, E., Fissel, A., Osten, H. J., & Kurz, H. (2006). 0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes . IEEE electron device letters, 27(10), 814-816. https://doi.org/10.1109/LED.2006.882581
Gottlob HDB, Echtermeyer T, Schmidt M, Mollenhauer T, Efavi JK, Wahlbrink T et al. 0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes . IEEE electron device letters. 2006 Sep 25;27(10):814-816. doi: 10.1109/LED.2006.882581
Gottlob, H. D.B. ; Echtermeyer, T. ; Schmidt, M. et al. / 0.86-nm CET Gate Stacks With Epitaxial Gd2O3 High-k Dielectrics and FUSI NiSi Metal Electrodes . in: IEEE electron device letters. 2006 ; Jahrgang 27, Nr. 10. S. 814-816.
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abstract = "In this letter, ultrathin gadolinium oxide (Gd2O3) high-κ gate dielectrics with complementary-metal-oxide- semiconductor (CMOS)-compatible fully silicided nickel-silicide metal gate electrodes are reported for the first time. MOS capacitors with a Gd2O3 thickness of 3.1 nm yield a capacitance equivalent oxide thickness of CET = 0.86 nm. The extracted dielectric constant is κ = 13-14. Leakage currents and equivalent oxide thicknesses of this novel gate stack meet the International Technology Roadmap for Semiconductors targets for the near term schedule and beyond.",
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AU - Gottlob, H. D.B.

AU - Echtermeyer, T.

AU - Schmidt, M.

AU - Mollenhauer, T.

AU - Efavi, J. K.

AU - Wahlbrink, T.

AU - Lemme, M. C.

AU - Czernohorsky, M.

AU - Bugiel, E.

AU - Fissel, A.

AU - Osten, H. J.

AU - Kurz, H.

N1 - Funding Information: Manuscript received May 22, 2006; revised July 20, 2006. This work was supported by the German Federal Ministry of Education and Research (BMBF) under Contract 01M3142 (“KrisMOS”), AMD Saxony LLC and Company KG, Infineon Technologies AG, and Freescale Halbleiter Deutschland GmbH and Qimonda AG. The review of this letter was arranged by Editor B. Yu.

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Y1 - 2006/9/25

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KW - Rare earth oxide

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