Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Autoren

  • A. Glamazda
  • A. Sharafeev
  • R. Bohle
  • P. Lemmens
  • K. Y. Choi
  • F. C. Chou
  • R. Sankar

Externe Organisationen

  • B. Verkin Institute for Low Temperature Physics and Engineering of the National Academy of Sciences of Ukraine
  • Technische Universität Braunschweig
  • Sungkyunkwan University
  • Academia Sinica (AS)
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Details

Titel in ÜbersetzungDoping from CDW to topological superconductivity: The role of defects on phonon scattering in the non-centrosymmetric PbxTaSe2
OriginalspracheRussisch
Seiten (von - bis)994-1002
Seitenumfang9
FachzeitschriftFizika Nizkikh Temperatur
Jahrgang47
Ausgabenummer11
PublikationsstatusVeröffentlicht - Nov. 2021
Extern publiziertJa

Abstract

The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

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Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2. / Glamazda, A.; Sharafeev, A.; Bohle, R. et al.
in: Fizika Nizkikh Temperatur, Jahrgang 47, Nr. 11, 11.2021, S. 994-1002.

Publikation: Beitrag in FachzeitschriftArtikelForschungPeer-Review

Glamazda, A, Sharafeev, A, Bohle, R, Lemmens, P, Choi, KY, Chou, FC & Sankar, R 2021, 'Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2', Fizika Nizkikh Temperatur, Jg. 47, Nr. 11, S. 994-1002.
Glamazda, A., Sharafeev, A., Bohle, R., Lemmens, P., Choi, K. Y., Chou, F. C., & Sankar, R. (2021). Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2. Fizika Nizkikh Temperatur, 47(11), 994-1002.
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title = "Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2",
abstract = "The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.",
keywords = "Raman spectroscopy, Topological materials, Transition metal dichalcogenides",
author = "A. Glamazda and A. Sharafeev and R. Bohle and P. Lemmens and Choi, {K. Y.} and Chou, {F. C.} and R. Sankar",
note = "Funding information: We are grateful to V. Gnezdilov, Yu. G. Pashkevich, and A. M{\"o}ller for an important discussion. This research was funded by the DFG Excellence Cluster Quantum-Frontiers, EXC 2123-390837967 and DFG Le967/16-1. RS acknowledges the financial support provided by the Ministry of Science and Technology in Taiwan under project number MOST-110-2112-M-001-065-MY3 and Academia Sinica for the budget of AS-iMATE-109-13. KYC was supported by the National Research Foundation (NRF) of Korea (Grants No. 2020R1A2C3012367).",
year = "2021",
month = nov,
language = "Russian",
volume = "47",
pages = "994--1002",
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TY - JOUR

T1 - Легування від CDW до топологічної надпровідності: роль дефектів у розсіюванні фононів у нецентросиметричному PbxTaSe2

AU - Glamazda, A.

AU - Sharafeev, A.

AU - Bohle, R.

AU - Lemmens, P.

AU - Choi, K. Y.

AU - Chou, F. C.

AU - Sankar, R.

N1 - Funding information: We are grateful to V. Gnezdilov, Yu. G. Pashkevich, and A. Möller for an important discussion. This research was funded by the DFG Excellence Cluster Quantum-Frontiers, EXC 2123-390837967 and DFG Le967/16-1. RS acknowledges the financial support provided by the Ministry of Science and Technology in Taiwan under project number MOST-110-2112-M-001-065-MY3 and Academia Sinica for the budget of AS-iMATE-109-13. KYC was supported by the National Research Foundation (NRF) of Korea (Grants No. 2020R1A2C3012367).

PY - 2021/11

Y1 - 2021/11

N2 - The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

AB - The vibrational and electronic properties of the Pb-doped dichalcogenide PbxTaSe2 (x = 0, 0.25, 0.33, 0.5, 0.75, and 1) have been investigated using Raman scattering experiments. A marked variation of the main vibrational modes with Pb concentration x is observed. The concentration dependence of the vibrational modes resembles the dependence of the vibrational modes in TaSe2 on the number of crystallographic layers along the c-axis direction. The temperature and polarization dependences of Raman spectra of PbxTaSe2 revealed additional broad modes in the low-frequency regime, which are discussed in the context of the remnant charge density wave, induced disorder, or PbSe phase formed in the interface of Pb and TaSe2 layers.

KW - Raman spectroscopy

KW - Topological materials

KW - Transition metal dichalcogenides

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M3 - Article

AN - SCOPUS:85116592074

VL - 47

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JO - Fizika Nizkikh Temperatur

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